Nitride-based light emitting devices and methods of manufacturing the same

• US 20070152353A1
• Filed: 08/17/2006
• Published: 07/05/2007
• Est. Priority Date: 01/05/2006
• Status: Active Grant

• Current Assignee: Samsung Corning Precision Materials Company Limited (Corning Incorporated)
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Park, Sung-soo
• Granted Patent: US 7,910,154 B2
• Time in Patent Office: Days
• US Class Current: 257/88
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: C30B 23/02 Epitaxial-layer growth
• CPC Class Codes: C30B 25/18 characterised by the substrate
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02513 Microstructure
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A light emitting device may include an n-clad layer formed on a crystalline wafer; a porous layer formed by processing the n-clad layer in a mixed gas atmosphere of HCl and NH₃. The light emitting device may further include an active layer and a p-clad layer formed on the porous layer.

Claims

1. A light emitting device comprising:

an n-clad layer formed on a crystalline wafer;

a porous layer formed by processing the n-clad layer in a gas atmosphere of HCl and NH₃; and

an active layer and a p-clad layer formed on the porous layer.

2. The light emitting device of claim 1, wherein the porous layer is formed to a thickness of about 1 μ

m to about 10 μ

m, inclusive.

3. The light emitting device of claim 1, wherein the crystalline wafer is one of a Si, GaAs, SiC, GaN or sapphire substrate.

4. The light emitting device of claim 1, wherein the n-clad layer is an n-GaN layer and the p-clad layer is a p-GaN layer.

5. The light emitting device of claim 1, wherein the active layer has a multi-quantum well (MQW) structure.

6. The light emitting device of claim 1, wherein the active layer has a GaN/InGaN/GaN MQW or GaN/AlGaN/GaN MQW structure.

7. A method of manufacturing a light emitting device, the method comprising:

forming an n-clad layer on a crystalline wafer;

forming a porous layer by processing the n-clad layer to a depth in a gas atmosphere of HCl and NH₃; and

sequentially forming an active layer and a p-clad layer on the porous layer.

8. The method of claim 7, wherein processing the n-clad layer is performed at a temperature of about 950°

C. to about 1200°

C., inclusive.

9. The method of claim 8, wherein processing the n-clad layer is performed at a temperature of about 1065°

C.

10. The method of claim 7, wherein processing the n-clad layer is performed in a halide or hydride vapor phase epitaxy (HVPE) system.

11. The method of claim 7, wherein a mixture ratio of HCl and NH₃ is about 1:

10.

12. The method of claim 7, wherein the gas further includes a carrier gas.

13. The method of claim 12, wherein the carrier gas includes at least one of N₂, Ar and H₂.

14. The method of claim 12, wherein a mixture ratio of HCl, NH₃ and the carrier gas is about 1:

10;

80.

15. The method of claim 7, wherein the porous layer is formed to a thickness of about 1 μ

m to about 10 μ

m, inclusive.

16. The method of claim 7, wherein the crystalline wafer is a Si, GaAs, SiC, GaN or sapphire substrate.

17. The method of claim 7, wherein the n-clad layer is an n-GaN layer and the p-clad layer is a p-GaN layer.

18. The method of claim 7, wherein the active layer has a multi-quantum well (MQW) structure.

19. The method of claim 18, wherein the active layer has a GaN/InGaN/GaN MQW or GaN/AlGaN/GaN MQW structure.

20. The method of claim 7, wherein the n-clad layer, the active layer and the p-clad layer are formed using vapor deposition.

21. The method of claim 20, wherein the vapor deposition is one of halide or hydride vapor phase epitaxy (HVPE), metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).