METHOD OF DRIVING A DUAL GATED MOSFET
First Claim
1. A method for driving a dual-gated MOSFET, the dual-gated MOSFET being switchable between conduction and blocking modes, the dual-gated MOSFET having a shielding gate, a switching gate, a gate-to-drain overlap regions and a drain-to-source resistance when the MOSFET is in the conduction mode, said method comprising:
- applying a first voltage signal to the shielding gate;
maintaining the first voltage signal at a first voltage level prior to switching the MOSFET from the blocking mode to the conduction mode, the first voltage level being selected to substantially completely charge the gate-to-drain overlap region of the MOSFET; and
further applying a second voltage signal to the switching gate, the second voltage signal switching the MOSFET between the blocking and conduction modes.
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Abstract
A method of driving a dual-gated MOSFET having a Miller capacitance between the MOSFET gate and drain includes preparing the MOSFET to switch from a blocking mode to a conduction mode by applying to the MOSFET shielding gate a first voltage signal having a first voltage level. The first voltage level is selected to charge the Miller capacitance and thereby reduce switching losses. A second voltage signal is applied to the switching gate to switch the MOSFET from the blocking to the conduction mode. The first voltage signal is then changed to a level selected to reduce the conduction mode drain-to-source resistance and thereby reduce conduction losses. The first voltage signal is returned to the first voltage level to prepare the MOSFET for being switched from the conduction mode to the blocking mode.
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Citations
14 Claims
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1. A method for driving a dual-gated MOSFET, the dual-gated MOSFET being switchable between conduction and blocking modes, the dual-gated MOSFET having a shielding gate, a switching gate, a gate-to-drain overlap regions and a drain-to-source resistance when the MOSFET is in the conduction mode, said method comprising:
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applying a first voltage signal to the shielding gate;
maintaining the first voltage signal at a first voltage level prior to switching the MOSFET from the blocking mode to the conduction mode, the first voltage level being selected to substantially completely charge the gate-to-drain overlap region of the MOSFET; and
further applying a second voltage signal to the switching gate, the second voltage signal switching the MOSFET between the blocking and conduction modes. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of driving a dual-gated MOSFET, the dual-gated MOSFET having a shielding gate, a switching gate, a Miller capacitance between the MOSFET gate and drain, and a drain-to-source resistance when the MOSFET is in the conduction mode, said method comprising:
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preparing the MOSFET to switch from the blocking mode to the conduction mode by applying a first voltage signal at a first voltage level to the shielding gate, the first voltage level being selected to substantially completely charge the Miller capacitance and thereby reduce switching losses; and
applying a second voltage signal to the switching gate to switch the MOSFET between the blocking and conduction modes. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification