Hard Mask Composition and Method for Manufacturing Semiconductor Device

• US 20070154838A1
• Filed: 06/02/2006
• Published: 07/05/2007
• Est. Priority Date: 12/30/2005
• Status: Active Grant

• Current Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: Lee, Geun Su
• Granted Patent: US 7,449,538 B2
• Time in Patent Office: Days
• US Class Current: 430/270.100
• CPC Class Codes: G03F 7/0752 in non photosensitive layers or as additives, e.g. for dry lithography
• CPC Class Codes: G03F 7/11 having cover layers or intermediate layers, e.g. subbing layers G03F7/091 - G03F7/093, B41N3/03 take precedence

Abstract

Disclosed herein is a cross-linking polymer that includes a silicon compound and a hydroxyl compound. Also disclosed herein is a composition that includes the cross-linking polymer and an organic solvent. The composition can be used as a part of hard mask film applied over an underlying layer during the manufacture of a semiconductor device. The hard mask film is useful in the formation of a uniform pattern on the device.

Claims

1. A cross-linking polymer comprising:

(a) a silicon compound of Formula 1

2. The cross-linking polymer of claim 1, wherein the silicon compound has a molecular weight ranging from 300 to 30,000.

3. The cross-linking polymer of claim 1, wherein the silicon compound is PSS-octa(trimethoxysilylmethyl) substituted or PSS-octa(trimethoxysilylethyl) substituted.

4. The cross-linking polymer of claim 1, wherein the silicon compound comprises Si in an amount ranging from 15 wt % to 45 wt %, based on the total weight of the silicon compound.

5. The cross-linking polymer of claim 1, wherein the hydroxyl compound has a molecular weight ranging from 100 to 10,000.

6. The cross-linking polymer of claim 1, wherein the hydroxyl compound is resorcinol or 1,4-benzenedimethanol.

7. The cross-linking polymer of claim 1, wherein the hydroxyl compound is present in an amount ranging from 10 parts by weight to 80 parts by weight, based on 100 parts by weight of the silicon compound.

8. The cross-linking polymer of claim 1, wherein the cross-linking polymer has a molecular weight ranging from 500 to 50,000.

9. A hard mask composition comprising an organic solvent, and a cross-linking polymer, the cross-linking polymer comprising:

(a) a silicon compound of Formula 1

10. The hard mask composition of claim 9, wherein the organic solvent is selected from the group consisting of ethyl 3-ethoxypropionate, methyl 3-methoxypropionate, cyclohexanone, propylene glycol monomethyl ether acetate (PGMEA), 2-heptanone, ethyl lactate, and mixtures thereof.

11. The hard mask composition of claim 9, wherein the organic solvent is present in an amount ranging from 500 parts by weight to 10,000 parts by weight, based on 100 parts by weight of the cross-linking polymer.

12. The hard mask composition of claim 9, further comprising a catalyst selected from the group consisting of a thermal acid generator, a photoacid generator, and mixtures thereof.

13. The hard mask composition of claim 12, wherein the catalyst is present in an amount ranging from 0.1 parts by weight to 10 parts by weight, based on 100 parts by weight of the cross-linking polymer.

14. The hard mask composition of claim 12, wherein the thermal acid generator is selected from the group consisting of

(a) a compound of Formula 4a

15. The hard mask composition of claim 12, wherein the photoacid generator is selected from the group consisting of phthalimidotrifluoromethane sulfonate, dinitrobenzyltosylate, n-decyldisulfone, naphtylimidotrifluoromethane sulfonate, diphenyl p-methoxyphenyl sulfonium triflate, diphenyl p-toluenyl sulfonium triflate, diphenyl p-isobutylphenyl sulfonium triflate, triphenylhexafluoro arsenate, triphenylhexafluoro antimonate, triphenyl sulfonium triflate, dibutylnaphtyl sulfonium triflate, and mixtures thereof.

16. A method for manufacturing a semiconductor device comprising:

(a) coating a hard mask film on an underlying layer;

(b) patterning the hard mask film to form a hard mask pattern; and

, (c) patterning the underlying layer using the hard mask pattern as an etching mask to form an underlying pattern,

wherein said hard mask film comprises the hard mask composition of claim 9.

17. The method of claim 16, wherein the underlying layer is an oxide film or an oxide nitride film.

18. The method of claim 16, wherein the hard mask film has a thickness ranging from 500 Å

to 200 Å

.

19. The method of claim 16, wherein the patterning process of steps (b) and (c) is performed using an etching gas selected from the group consisting of Cl₂, Ar, N₂O₂, CF₄, C₂F₆, and mixtures thereof.

20. The method of claim 16, wherein the coating step (a) further comprises forming an amorphous carbon layer or a polymer layer having a high carbon content on the underlying layer before forming the hard mask layer.

21. A semiconductor device manufactured by the method of claim 16.