Memory Cell Array
First Claim
1. A method of forming a memory cell array, the method comprising:
- providing a plurality of memory cells along a substrate, each of the memory cells comprising a storage element and an access transistor;
forming a plurality of bit lines that extend along a first direction of the substrate; and
forming a plurality of active area lines and a plurality of isolation trenches in the semiconductor substrate, the isolation trenches being adjacent the active area lines such that each isolation trench is disposed between and electrically isolates a first active area line from a second active area line;
wherein the access transistors are at least partially formed in the active area lines and electrically couple corresponding storage elements to corresponding bit lines via bit line contacts, and at least a portion of each bit line contact is located at an intersection of a bit line and a corresponding active area line.
3 Assignments
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Accused Products
Abstract
A memory cell array is formed by providing a plurality of memory cells along a substrate, where each of the memory cells includes a storage element and an access transistor. A plurality of bit lines are formed that extend along a first direction of the substrate. A plurality of active area lines and a plurality of isolation trenches are also formed in the semiconductor substrate, with the isolation trenches being adjacent the active area lines such that each isolation trench is disposed between and electrically isolates a first active area line from a second active area line. The access transistors are at least partially formed in the active area lines and electrically couple corresponding storage elements to corresponding bit lines via bit line contacts, and at least a portion of each bit line contact is located at an intersection of a bit line and a corresponding active area line.
7 Citations
22 Claims
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1. A method of forming a memory cell array, the method comprising:
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providing a plurality of memory cells along a substrate, each of the memory cells comprising a storage element and an access transistor;
forming a plurality of bit lines that extend along a first direction of the substrate; and
forming a plurality of active area lines and a plurality of isolation trenches in the semiconductor substrate, the isolation trenches being adjacent the active area lines such that each isolation trench is disposed between and electrically isolates a first active area line from a second active area line;
wherein the access transistors are at least partially formed in the active area lines and electrically couple corresponding storage elements to corresponding bit lines via bit line contacts, and at least a portion of each bit line contact is located at an intersection of a bit line and a corresponding active area line. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of forming bit line contacts in a substrate, the method comprising:
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forming a plurality of bit lines that extend along a first direction of the substrate; and
forming a plurality of active area lines in the substrate;
wherein a plurality of bit line contacts are formed along each active area line, and at least a portion of each bit line contact is located at an intersection of a bit line and an active area line. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22)
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Specification