Semiconductor device and method of manufacturing the same
First Claim
1. A semiconductor device comprising:
- a first conductive type substrate;
a second conductive type epitaxial layer on the first conductive substrate and having a trench therein;
a P-N junction aligned vertically along an inner wall of the trench;
an insulation layer covering an inner portion and an outer wall of the trench;
a gate electrode on the insulation layer;
a body region at sides of the gate electrode;
a source electrode on an upper portion of the body region; and
a drain electrode on a bottom surface of the first conductive type substrate.
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Accused Products
Abstract
Disclosed are a semiconductor device having a vertical trench gate structure to improve the integration degree and a method of manufacturing the same. The semiconductor device includes an epitaxial layer having a second conductive type on a first conductive type substrate having an active region and an isolation region, a trench in the isolation region, a first conductive type first region in the epitaxial layer at opposite side portions of the trench, an isolation layer at a predetermined depth in the trench, a gate insulation layer along upper side portions of the trench, a gate electrode in an upper portion of the trench, a body region in the active region, a source electrode on the body region, a source region in an upper portion of the body region at opposite side portions of the gate electrode, and a drain electrode at a rear surface of the substrate.
10 Citations
17 Claims
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1. A semiconductor device comprising:
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a first conductive type substrate;
a second conductive type epitaxial layer on the first conductive substrate and having a trench therein;
a P-N junction aligned vertically along an inner wall of the trench;
an insulation layer covering an inner portion and an outer wall of the trench;
a gate electrode on the insulation layer;
a body region at sides of the gate electrode;
a source electrode on an upper portion of the body region; and
a drain electrode on a bottom surface of the first conductive type substrate. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of forming a semiconductor device, the method comprising the steps of:
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forming an epitaxial layer having a second conductivity type on a first conductive type substrate;
forming a trench in the epitaxial layer;
forming a P-N junction along an inner wall of the trench;
forming an insulation layer in the trench;
forming a gate electrode on the insulation layer;
forming a source region at opposite sides of the gate electrode; and
forming source and drain electrodes. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification