SEMICONDUCTOR DEVICE

• US 20070158826A1
• Filed: 12/26/2006
• Published: 07/12/2007
• Est. Priority Date: 12/27/2005
• Status: Abandoned Application

• Current Assignee: Yamaha Corporation
• Original Assignee: Yamaha Corporation
• Inventors: Saitoh, Hiroshi, Sakakibara, Shingo
• Application Number:
  US11/616,125
• Publication Number:
  US 20070158826A1
• Time in Patent Office: Days
• US Class Current: 257/723
• CPC Class Codes: B81B 7/0064 for protecting against electromagnetic or electrostatic interferences
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding
• CPC Class Codes: H04R 1/04 Structural association of microphone with electric circuitry therefor in deaf-aid sets H04R25/00
• CPC Class Codes: H04R 2201/003 Mems transducers or their use of the electrostatic type H04R19/005

Abstract

A semiconductor device includes a substrate, a semiconductor chip having a diaphragm, which vibrates in response to sound pressure variations, and a circuit chip that is electrically connected to the semiconductor chip so as to control the semiconductor chip, wherein the semiconductor chip is fixed to the surface of the circuit chip whose backside is mounted on the surface of the substrate. Herein, a plurality of connection terminals formed on the backside of the semiconductor chip are electrically connected to a plurality of electrodes running through the circuit chip. A ring-shaped resin sheet is inserted between the semiconductor chip and the circuit chip. The semiconductor chip and the circuit chip vertically joined together are stored in a shield case having a mount member (e.g., a stage) and a cover member, wherein connection terminals of the circuit chip are exposed to the exterior via through holes of the stage.

Claims

1. A semiconductor device comprising:

a substrate;

a semiconductor chip having a diaphragm, which vibrates in response to pressure variations; and

a circuit chip that is electrically connected to the semiconductor chip so as to control the semiconductor chip,

wherein the semiconductor chip is positioned opposite to and fixed to a surface of the circuit chip whose backside is attached onto a surface of the substrate.

2. A semiconductor device according to claim 1, wherein a recess is formed and recessed from the surface of the circuit chip so that an opening thereof is positioned opposite to the diaphragm.

3. A semiconductor device according to claim 1, wherein a plurality of connection terminals are formed on the backside of the circuit chip so as to establish electrical connection with the substrate.

4. A semiconductor device according to claim 1, wherein a plurality of connection terminals are formed on the surface of the circuit chip and on a backside of the semiconductor chip, which is positioned opposite to the surface of the circuit chip, so as to establish an electrical connection between the circuit chip and the semiconductor chip.

5. A semiconductor device according to claim 1, wherein a plurality of connection terminals are formed on the backside of the circuit chip so as to establish an electrical connection with the substrate, and wherein a plurality of connection terminals are formed on the surface of the circuit chip and on a backside of the semiconductor chip, which is positioned opposite to the surface of the circuit chip, so as to establish an electrical connection between the circuit chip and the semiconductor chip

6. A semiconductor device according to claim 1 further comprising a spacer having a rectangular shape, which is inserted between the semiconductor chip and the circuit chip, wherein an overall area of the spacer is smaller than an overall area of the surface of the circuit chip.

7. A semiconductor device according to claim 1 further comprising a spacer having a rectangular shape, which is inserted between the semiconductor chip and the circuit chip, wherein an overall area of the spacer is smaller than an overall area of the surface of the circuit chip, and wherein a through hole is formed and runs through the spacer in its thickness direction, thus allowing the diaphragm to be positioned opposite to the surface of the circuit chip via the through hole.

8. A semiconductor device according to claim 1 further comprising a spacer having a rectangular shape, which is inserted between the semiconductor chip and the circuit chip, wherein an overall area of the spacer is smaller than an overall area of the surface of the circuit chip, wherein a through hole is formed and runs through the spacer in its thickness direction so as to allow the diaphragm to be positioned opposite to the surface of the circuit chip via the through hole, and wherein a plurality of connection terminals are formed on the backside of the circuit chip so as to establish an electrical connection with the substrate.

9. A semiconductor device according to claim 1 further comprising a spacer having a rectangular shape, which is inserted between the semiconductor chip and the circuit chip, wherein an overall area of the spacer is smaller than an overall area of the surface of the circuit chip, wherein a through hole is formed and runs through the spacer in its thickness direction so as to allow the diaphragm to be positioned opposite to the surface of the circuit chip via the through hole, and wherein a plurality of connection terminals are formed on the surface of the circuit chip and on a backside of the semiconductor chip, which is positioned opposite to the surface of the circuit chip, so as to establish an electrical connection between the circuit chip and the semiconductor chip.

10. A semiconductor device according to claim 1 further comprising a spacer having a rectangular shape, which is inserted between the semiconductor chip and the circuit chip, wherein an overall area of the spacer is smaller than an overall area of the surface of the circuit chip, wherein a through hole is formed and runs through the spacer in its thickness direction so as to allow the diaphragm to be positioned opposite to the surface of the circuit chip via the through hole, wherein a plurality of connection terminals are formed on the backside of the circuit chip so as to establish an electrical connection with the substrate, and wherein a plurality of connection terminals are formed on the surface of the circuit chip and on a backside of the semiconductor chip, which is positioned opposite to the surface of the circuit chip, so as to establish an electrical connection between the circuit chip and the semiconductor chip.

11. A semiconductor device according to claim 1 further comprising

a plurality of electrodes, which run through the circuit chip in its thickness direction from the surface thereof to the backside thereof,

a plurality of connection terminals, which are formed on a backside of the semiconductor chip positioned opposite to the surface of the circuit chip and which are electrically connected to the plurality of electrodes, and

a ring-shaped resin sheet, which is positioned in a surrounding area of the diaphragm and which is inserted between the semiconductor chip and the circuit chip, which are thus joined together without a gap therebetween.

12. A semiconductor device according to claim 11, wherein the ring-shaped resin sheet is composed of a resin material that is softer than the semiconductor chip and the circuit chip.

13. A semiconductor device according to claim 11, wherein the plurality of connection terminals and the plurality of electrodes are positioned opposite to each other, and wherein the ring-shaped resin sheet is composed of an anisotropic conductive film, which has a conductivity in a thickness direction and an insulating ability along a surface thereof, and is positioned between the plurality of connection terminals and the plurality of electrodes.

14. A semiconductor device according to claim 11, wherein a recess is formed and recessed downwardly from the surface of the circuit chip so that an opening thereof is positioned opposite to the diaphragm.

15. semiconductor device according to claim 11 further comprising a cover member that is fixed to a surface of the semiconductor chip so as to cover side portions of the semiconductor chip and side portions of the circuit chip, wherein an opening is formed at a prescribed position of the cover member so as to partially expose the diaphragm to an exterior.

16. A semiconductor device according to claim 11 further comprising a cover member that is fixed to a surface of the semiconductor chip so as to cover side portions of the semiconductor chip and side portions of the circuit chip, wherein an opening is formed at a prescribed position of the cover member so as to partially expose the diaphragm to an exterior, and wherein a recess is formed and recessed downwardly from the surface of the circuit chip so that an opening thereof is positioned opposite to the diaphragm.

17. A semiconductor device according to claim 11 further comprising a cover member, which includes a conductive member coated with an insulating film and which is fixed to a surface of the semiconductor chip so as to cover side portions of the semiconductor chip and side portions of the circuit chip, wherein an opening is formed at a prescribed position of the cover member so as to partially expose the diaphragm to an exterior.

18. A semiconductor device according to claim 11 further comprising a cover member, which includes a conductive member coated with an insulating film and which is fixed to a surface of the semiconductor chip so as to cover side portions of the semiconductor chip and side portions of the circuit chip, wherein an opening is formed at a prescribed position of the cover member so as to partially expose the diaphragm to an exterior, and wherein a recess is formed and recessed downwardly from the surface of the circuit chip so that an opening thereof is positioned opposite to the diaphragm.

19. A semiconductor device according to claim 1 further comprising a shield case for storing the semiconductor chip and the circuit chip therein, wherein the shield case, which is formed by coating a conductive member with an insulating film, includes a stage having a rectangular shape, which the circuit chip is fixed onto, a top portion, which is positioned opposite to a surface of the semiconductor chip and which has an opening allowing the diaphragm to be exposed to an exterior of the shield case, and a plurality of side walls, which are elongated from side ends of the stage to side ends of the top portion so as to surround the semiconductor chip and the circuit chip, which are vertically joined together, and wherein a plurality of through holes are formed in the stage so as to allow a plurality of connection terminals, which are formed on the backside of the circuit chip, to be exposed.

20. A semiconductor device according to claim 19, wherein at least a first ground terminal and a second ground terminal, which are electrically connected to each other, are formed on the backside of the circuit chip, wherein the first ground terminal forms the connection terminal, and wherein the second ground terminal is positioned opposite to a surface of the stage, on which the conductive member is partially exposed and is electrically connected to the second ground terminal.

21. A semiconductor device according to claim 19, wherein a plurality of ground terminals are formed on the backside of the circuit chip and are inserted into a plurality of through holes, in which the conductive member is partially exposed in interior surfaces thereof, so that the ground terminals are brought into contact with and are electrically connected to the conductive member.

22. A semiconductor device according to claim 19, wherein the shield case is constituted of a cover member having the top portion and the plurality of side walls and a mount member having the stage, and wherein the cover member is engaged with the mount member so as to form the shield case.

23. A semiconductor device according to claim 19, wherein a plurality of recesses are formed and recessed from the backside of the circuit chip so as to cover the surface of the stage except for prescribed regions corresponding to the through holes.

24. A semiconductor device according to claim 19, wherein a plurality of heat-dissipation holes are formed on the plurality of side walls so as to dissipate heat generated by the semiconductor chip and/or the circuit chip.

25. A semiconductor device according to claim 19, wherein the semiconductor chip and the circuit chip, which are vertically joined together, are adhered together by means of a ring-shaped resin sheet, which is positioned in a periphery of the diaphragm, without a gap therebetween.

26. A semiconductor device according to claim 19, wherein the semiconductor chip and the circuit chip, which are vertically joined together, are adhered together by means of a ring-shaped resin sheet, which is positioned in a periphery of the diaphragm, without a gap therebetween, and wherein a recess is formed and recessed from the surface of the circuit chip, which is positioned opposite to the diaphragm.

27. A manufacturing method for a semiconductor device, in which a semiconductor chip having a diaphragm and a circuit chip are vertically joined together and are stored in a shield case such that the diaphragm is exposed to an exterior of the shield case, said manufacturing method comprising the steps of:

attaching the semiconductor chip onto a surface of the circuit chip in such a way that the diaphragm is positioned opposite to the circuit chip, thus fixing and electrically connecting together the semiconductor chip and the circuit chip;

fixing the circuit chip onto a surface of a stage having a rectangular shape included in a mount member of the shield case, in which an insulating film is coated on a surface of a conductive member, thus exposing a plurality of connection terminals, which are formed on a backside of the circuit chip, to an exterior of the mount member via a plurality of through holes, which are formed in the stage; and

covering the semiconductor chip and the circuit chip, which are vertically joined together, with a cover member of the shield case, in which an insulating film is coated on a surface of a conductive member, so that the cover member is engaged with the mount member so as to form the shield case,

wherein prescribed portions of the conductive member of the cover member are tightly engaged with prescribed portions of the conductive member of the mount member so as to remove the insulating films therefrom, so that the conductive member of the cover member is brought into direct contact with the conductive member of the mount member.

28. The manufacturing method for a semiconductor device according to claim 27, wherein a plurality of ground terminals, which are formed on the backside of the circuit chip, are brought into contact with the stage corresponding to the conductive member of the mount member.

29. The manufacturing method for a semiconductor device according to claim 27, wherein prescribed portions of the stage except for prescribed regions corresponding to the through holes are engaged with a plurality of recesses, which are formed and recessed from the backside of the circuit chip.