×

METHODS OF MANUFACTURING A THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICES FABRICATED THEREBY

  • US 20070158831A1
  • Filed: 01/09/2007
  • Published: 07/12/2007
  • Est. Priority Date: 01/10/2006
  • Status: Active Grant
First Claim
Patent Images

1. A method of manufacturing a semiconductor device comprising:

  • forming an insulation layer on a first semiconductor substrate;

    forming an opening through the insulation layer, the opening exposing a region of the first semiconductor substrate;

    forming a heat conductive plug in the opening;

    forming a separation layer in a second semiconductor substrate, the separation layer separating a surface layer and a bulk layer on the second semiconductor substrate;

    bonding the insulation layer of the first substrate to the surface layer of the second substrate;

    delaminating the bulk layer from the surface layer at the separation layer;

    heat treating the surface layer while conducting heat away from the surface layer primarily through the heat conductive plug into the first semiconductor substrate; and

    forming an upper device on the surface layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×