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Power semiconductor module

  • US 20070158859A1
  • Filed: 07/28/2006
  • Published: 07/12/2007
  • Est. Priority Date: 08/01/2005
  • Status: Active Grant
First Claim
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1. A power semiconductor module comprising:

  • a ceramic substrate which has on at least one side a patterned metallization with a fineness of pattern of smaller than or equal to 800 μ

    m, a first semiconductor chip which comprises a power semiconductor component and which is arranged on the patterned metallization, a second semiconductor chip which comprises drive electronics for driving the first semiconductor chip and which is arranged on the patterned metallization, and at least one thin-wire bond with a bonding-wire diameter of smaller than or equal to 75 μ

    m, which is formed between the patterned metallization and the second semiconductor chip.

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