Power semiconductor module
First Claim
1. A power semiconductor module comprising:
- a ceramic substrate which has on at least one side a patterned metallization with a fineness of pattern of smaller than or equal to 800 μ
m, a first semiconductor chip which comprises a power semiconductor component and which is arranged on the patterned metallization, a second semiconductor chip which comprises drive electronics for driving the first semiconductor chip and which is arranged on the patterned metallization, and at least one thin-wire bond with a bonding-wire diameter of smaller than or equal to 75 μ
m, which is formed between the patterned metallization and the second semiconductor chip.
1 Assignment
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Accused Products
Abstract
A power semiconductor module has a ceramic substrate (9) which has on at least one side a patterned metallization (50) with a fineness of pattern of smaller than or equal to 800 μm, a first semiconductor chip (10) which has a power semiconductor component and which is arranged on the patterned metallization (50), and a second semiconductor chip (30) which has drive electronics for driving the first semiconductor chip (10) and which is arranged on the patterned metallization (50). Furthermore, at least one thin-wire bond (2, 3) with a bonding-wire diameter (d2, d3) of smaller than or equal to 75 μm is provided which is formed between the patterned metallization (50) and the second semiconductor chip (30).
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Citations
25 Claims
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1. A power semiconductor module comprising:
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a ceramic substrate which has on at least one side a patterned metallization with a fineness of pattern of smaller than or equal to 800 μ
m,a first semiconductor chip which comprises a power semiconductor component and which is arranged on the patterned metallization, a second semiconductor chip which comprises drive electronics for driving the first semiconductor chip and which is arranged on the patterned metallization, and at least one thin-wire bond with a bonding-wire diameter of smaller than or equal to 75 μ
m, which is formed between the patterned metallization and the second semiconductor chip. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A power semiconductor module comprising:
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a ceramic substrate which has on at least one side a patterned metallization with a fineness of pattern of smaller than or equal to 800 μ
m,a first semiconductor chip which comprises a power semiconductor component and which is arranged on the patterned metallization, a second semiconductor chip which comprises drive electronics for driving the first semiconductor chip and which is arranged on the patterned metallization, and at least one thin-wire bond with a bonding-wire diameter of smaller than or equal to 75 μ
m, which is formed between the patterned metallization and the second semiconductor chip, wherein at least one ceramic capacitor is arranged on the patterned metallization, and wherein the at least one thin-wire bond has a bonding-wire diameter of smaller than or equal to 50 μ
m.
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25. A power semiconductor module comprising:
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a ceramic substrate which has on at least one side a patterned metallization with a fineness of pattern of smaller than or equal to 800 μ
m,a first semiconductor chip which comprises a power semiconductor component and which is arranged on the patterned metallization, a second semiconductor chip which comprises drive electronics for driving the first semiconductor chip and which is arranged on the patterned metallization, and at least one thin-wire bond with a bonding-wire diameter of smaller than or equal to 75 μ
m, which is formed between the patterned metallization and the second semiconductor chip,wherein the first semiconductor chip has a gate terminal which is connected to an output of the second semiconductor chip via a coreless transformer, a first driver chip arranged between the output of the second semiconductor chip and the gate terminal, and a second driver chip arranged between the output of the second semiconductor chip and/or an output of the first driver chip and the gate terminal.
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Specification