Optoelectronic devices having electrode films and methods and system for manufacturing the same
First Claim
Patent Images
1. A method of making an electrode film, the method comprising:
- providing a target;
moving a substrate relative to the target;
positioning a shield to block a spatial region of sputtered target material from depositing on the substrate, wherein the spatial region corresponds to a region of plasma formed during DC magnetron sputtering, wherein the shield is held stationary relative to the target; and
DC magnetron sputtering said target to deposit an electrode film on the substrate.
7 Assignments
0 Petitions
Accused Products
Abstract
A method and system for DC magnetron sputtering deposition of films on plastic substrates. The method includes using a shield to block deposition in a spatial region corresponding to a plasma region formed during magnetron sputtering. An optoelectronic device including an amorphous electrode film is also disclosed.
35 Citations
31 Claims
-
1. A method of making an electrode film, the method comprising:
-
providing a target;
moving a substrate relative to the target;
positioning a shield to block a spatial region of sputtered target material from depositing on the substrate, wherein the spatial region corresponds to a region of plasma formed during DC magnetron sputtering, wherein the shield is held stationary relative to the target; and
DC magnetron sputtering said target to deposit an electrode film on the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
-
-
15. A deposition system comprising:
-
a vacuum chamber;
a DC magnetron sputter target;
a substrate holder to hold a substrate, wherein the substrate holder is capable of rotating about a rotation center; and
a shield to block a spatial region of sputtered target material from depositing on the substrate, wherein the spatial region corresponds to a region of plasma formed during DC magnetron sputtering;
wherein the shield is held stationary relative to the targetwherein the DC magnetron sputter target, the substrate holder and the shield are disposed within the vacuum chamber. - View Dependent Claims (16, 17, 18, 19, 20)
-
-
21. A high uniformity, high transparency, low resistivity, amorphous film, wherein the amorphous film comprises material comprising indium tin oxide, tin oxide, indium oxide, zinc oxide, aluminum oxide, gallium oxide, cadmium oxide, or indium zinc oxide, or any combination thereof,
wherein the amorphous film has a bulk resistivity less than about 1× - 10−
3 ohm-cm;
wherein the amorphous film has a transmittance greater than about 80% in a wavelength region from about 400 nm to about 700 nm; and
wherein the amorphous film has a thickness variation less than about 10% of the average thickness of the amorphous film. - View Dependent Claims (22, 23, 24, 25)
- 10−
-
26. An article comprising:
-
a plastic substrate; and
a high uniformity, high transparency, high flexibility, low resistivity amorphous film deposited on the plastic substrate, wherein the amorphous film comprises material comprising indium tin oxide, tin oxide, indium oxide, zinc oxide, or indium zinc oxide, aluminum oxide, gallium oxide, cadmium oxide, or any combination thereof.
-
-
27. An optoelectronic device comprising:
-
a plastic substrate;
an amorphous electrode film deposited on the plastic substrate, wherein the amorphous electrode film has a bulk resistivity less than about 1×
10−
3 ohm-cm and a transmittance greater than about 80% in the wavelength region from about 400 nm to about 700 nm; and
an optoelectronic layer. - View Dependent Claims (28, 29, 30, 31)
-
Specification