Semiconductor device

• US 20070159335A1
• Filed: 02/01/2005
• Published: 07/12/2007
• Est. Priority Date: 02/06/2004
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Arai, Yasuyuki, Akiba, Mai, Kanno, Yohei, Tachimura, Yuko
• Granted Patent: US 7,994,617 B2
• Time in Patent Office: Days
• US Class Current: 340/572.800
• CPC Class Codes: G06K 19/025 the material being flexible or adapted for folding, e.g. paper or paper-like materials used in luggage labels, identification tags, forms or identification documents carrying RFIDs methods for testing the genuineness of valuable papers, e.g. banknotes or passports G07D7/00; constructional features of booklets and the like B42D
• CPC Class Codes: G06K 19/07728 the record carrier comprising means for protection against impact or bending, e.g. protective shells or stress-absorbing layers around the integrated circuit
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components

Abstract

An object of the present invention is providing a semiconductor device that is capable of improving the reliability of a semiconductor element and enhancing the mechanical strength without suppressing the scale of a circuit. The semiconductor device includes an integrated circuit sandwiched between first and second sealing films, an antenna electrically connected to the integrated circuit, the first sealing film sandwiched between a substrate and the integrated circuit, which includes a plurality of first insulating films and at least one second insulating film sandwiched therebetween, the second sealing film including a plurality of third insulating films and at least one fourth insulating film sandwiched therebetween. The second insulating film has lower stress than the first insulting film and the fourth insulating film has lower stress than the third insulating film. The first and third insulating films are inorganic insulating films.

Claims

1. A semiconductor device comprising:

an integrated circuit using a thin film transistor;

an antenna;

a first sealing film;

a second sealing film; and

a substrate,

wherein the integrated circuit and the antenna are electrically connected to each other,

the integrated circuit is sandwiched between the first sealing film and the second sealing film,

the first sealing film is sandwiched between the substrate and the integrated circuit,

the first sealing film includes a plurality of first insulating films and one or a plurality of second insulating films sandwiched between the plurality of first insulating films,

the second sealing film includes a plurality of third insulating films and one or a plurality of fourth insulating films sandwiched between the plurality of third insulating films,

the one or the plurality of second insulating films has lower stress than the plurality of first insulting films,

the one or the plurality of fourth insulating films has lower stress than the plurality of third insulating films, and

the plurality of first insulating films and the plurality of third insulating films are inorganic insulating films.

5. The semiconductor device according to any one of claim 1 through claim 3, wherein the antenna and a gate electrode of the thin film transistor are formed by patterning a conductive film.

6. The semiconductor device according to any one of claim 1 through claim 3, wherein the antenna and a wiring connected to the thin film transistor are formed by patterning a conductive film.

10. The semiconductor device according to any one of claims 1-3 and 7-9, wherein the substrate has flexibility.

11. The semiconductor device according to any one of claims 1-3 and 7-9, wherein the plurality of first insulating films or the plurality of third insulating films includes silicon nitride, silicon nitride oxide, aluminum oxide, aluminum nitride, aluminum nitride oxide or aluminum silicon nitride oxide.

12. The semiconductor device according to any one of claims 1-3 and 7-9, wherein the one or the plurality of second insulating films or the one or the plurality of third insulating films includes polyimide, acrylic, polyamide, polyimide amide, benzocyclobutene or epoxy resin.

2. A semiconductor device comprising:

an integrated circuit using a thin film transistor;

an antenna;

a first sealing film;

a second sealing film;

a substrate; and

a cover member,

wherein the integrated circuit and the antenna are electrically connected to each other,

the integrated circuit is sandwiched between the first sealing film and the second sealing film,

the first sealing film and the second sealing film are sandwiched between the substrate and the cover member,

the first sealing film includes a plurality of first insulating films and one or a plurality of second insulating films sandwiched between the plurality of first insulating films,

the second sealing film includes a plurality of third insulating films and one or a plurality of fourth insulating films sandwiched between the plurality of third insulating films,

the one or the plurality of second insulating films has lower stress than the plurality of first insulating films,

the one or the plurality of fourth insulating films has lower stress than the plurality of third insulating films, and

the plurality of first insulating films and the plurality of third insulating films are inorganic insulating films.

4. The semiconductor device according to claim 2 or 3, wherein the cover member has flexibility.

3. A semiconductor device comprising:

an integrated circuit using a thin film transistor;

an antenna;

a first sealing film;

a second sealing film;

a substrate; and

a cover member,

wherein the integrated circuit and the antenna are electrically connected to each other,

the integrated circuit and the antenna are sandwiched between the first sealing film and the second sealing film,

the first sealing film and the second sealing film are sandwiched between the substrate and the cover member,

the first sealing film includes a plurality of first insulating films and one or a plurality of second insulating films sandwiched between the plurality of first insulating films,

the second sealing film includes a plurality of third insulating films and one or a plurality of fourth insulating films sandwiched between the plurality of third insulating films,

the one or the plurality of second insulating films has lower stress than the plurality of first insulating films,

the one or the plurality of fourth insulating films has lower stress than the plurality of third insulating films, and

the plurality of first insulating films and the plurality of third insulating films are inorganic insulating films.

7. A semiconductor device comprising:

an integrated circuit using a thin film transistor;

an antenna;

a first sealing film;

a second sealing film;

a substrate; and

a cover member,

wherein the integrated circuit is sandwiched between the first sealing film and the second sealing film,

the first sealing film and the second sealing film are sandwiched between the substrate and the cover member,

the cover member is sandwiched between the antenna and the second sealing film,

the integrated circuit and the antenna are electrically connected to each other via a contact hole formed in the cover member and the second sealing film,

the first sealing film includes a plurality of first insulating films and one or a plurality of second insulating films sandwiched between the plurality of first insulating films,

the second sealing film includes a plurality of third insulating films and one or a plurality of fourth insulating films sandwiched between the plurality of third insulating films,

the one or the plurality of second insulating films has lower stress than the plurality of first insulating films,

the one or the plurality of fourth insulating films has lower stress than the plurality of third insulating films, and

the plurality of first insulating films and the plurality of third insulating films are inorganic insulating films.

8. The semiconductor device according to claim 7, wherein the cover member has flexibility.

9. A semiconductor device comprising:

an integrated circuit using a thin film transistor;

a first sealing film;

a second sealing film; and

a substrate,

wherein the integrated circuit is sandwiched between the first sealing film and the second sealing film,

the first sealing film is sandwiched between the substrate and the integrated circuit,

the integrated circuit includes a connection terminal,

the integrated circuit further includes a rectification circuit for generating a supply voltage from an alternating-current signal that is input in the connection terminal by an antenna;

a demodulation circuit for generating a first signal by demodulating the alternating-current signal;

a microprocessor for performing arithmetic processing in accordance with the first signal to generate a second signal;

a modulation circuit for modulating the second signal; and

a switch for modulating load applied to the antenna in accordance with the modulated second signal,

the first sealing film includes a plurality of first insulating films and one or a plurality of second insulating films sandwiched between the plurality of first insulating films,

the second sealing film includes a plurality of third insulating films and one or a plurality of fourth insulating films sandwiched between the plurality of third insulating films,

the one or the plurality of second insulating films has lower stress than the plurality of first insulating films,

the one or the plurality of fourth insulating films has lower stress than the plurality of third insulating films, and

the plurality of first insulating films and the plurality of third insulating films are inorganic insulating films.