Methods of making controlled segregated phase domain structures

• US 20070160763A1
• Filed: 01/12/2006
• Published: 07/12/2007
• Est. Priority Date: 01/12/2006
• Status: Abandoned Application

• Current Assignee: HelioVolt Corporation
• Original Assignee: HelioVolt Corporation
• Inventors: Stanbery, Billy
• Application Number:
  US11/331,422
• Publication Number:
  US 20070160763A1
• Time in Patent Office: Days
• US Class Current: 427/301
• CPC Class Codes: H01L 31/0322 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
• CPC Class Codes: H01L 31/0749 including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
• CPC Class Codes: H01L 31/1896 for thin-film semiconductors
• CPC Class Codes: Y02E 10/541 CuInSe2 material PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A method includes providing a first precursor on a first substrate; providing a second precursor on a second substrate; contacting the first precursor and the second precursor; reacting the first precursor and the second precursor to form a chemical reaction product; and moving the first substrate and the second substrate relative to one another to separate the chemical reaction product from at least one member selected from the group consisting of the first substrate and the second substrate, characterized in that, to control formation of a segregated phase domain structure within the chemical reaction product, a constituent of at least one member selected from the group consisting of the first precursor and the second precursor is provided in a quantity that substantially regularly periodically varies from a mean quantity with regard to basal spatial location.

Claims

1. A method, comprising:

providing a first precursor on a first substrate;

providing a second precursor on a second substrate;

contacting the first precursor and the second precursor;

reacting the first precursor and the second precursor to form a chemical reaction product; and

moving the first substrate and the second substrate relative to one another to separate the chemical reaction product from at least one member selected from the group consisting of the first substrate and the second substrate,

characterized in that, to control formation of a segregated phase domain structure within the chemical reaction product, a constituent of at least one member selected from the group consisting of the first precursor and the second precursor is provided in a quantity that substantially regularly periodically varies from a mean quantity with regard to basal spatial location.

2. The method of claim 1, wherein the segregated phase domain structure includes a segregated phase domain array.

3. The method of claim 1, wherein the quantity of the constituent is substantially regularly periodically increased by planar coating a substantially regularly periodically relieved surface with a material that includes an excess of the constituent relative to the mean quantity.

4. The method of claim 1, wherein the quantity of the constituent is substantially regularly periodically increased by depositing a plurality of constituent sources that include an excess of the constituent relative to the mean quantity.

5. The method of claim 1, wherein the quantity in which the constituent is provided periodically varies from the mean quantity with respect to basal spatial location on a sub-micron scale.

6. The method of claim 1, wherein the quantity in which the constituent is provided periodically varies from the mean quantity with respect to basal spatial location on a scale that is substantially a multiple of approximately five nanometers.

7. The method of claim 1, further comprising generating an electric field between the first substrate and the second substrate

8. A method, comprising:

providing a first precursor on a first substrate;

providing a second precursor on a second substrate;

contacting the first precursor and the second precursor;

reacting the first precursor and the second precursor to form a chemical reaction product; and

moving the first substrate and the second substrate relative to one another to separate the chemical reaction product from at least one member selected from the group consisting of the first substrate and the second substrate,

characterized in that, to control formation of a segregated phase domain structure within the chemical reaction product, a constituent of at least one member selected from the group consisting of the first precursor and the second precursor is provided in a quantity that substantially regularly periodically varies from a mean quantity with regard to basal spatial location,

wherein the segregated phase domain structure includes a segregated phase domain array,

wherein the quantity of the constituent is substantially regularly periodically increased by planar coating a substantially regularly periodically relieved surface with a material that includes an excess of the constituent relative to the mean quantity, and

wherein the quantity in which the constituent is provided periodically varies from the mean quantity with respect to basal spatial location on a sub-micron scale.

9. The method of claim 8, wherein the quantity in which the constituent is provided periodically varies from the mean quantity with respect to basal spatial location on a scale that is substantially a multiple of approximately five nanometers.

10. The method of claim 8, further comprising generating an electric field between the first substrate and the second substrate

11. A method, comprising:

providing a first precursor on a first substrate;

providing a second precursor on a second substrate;

contacting the first precursor and the second precursor;

reacting the first precursor and the second precursor to form a chemical reaction product; and

moving the first substrate and the second substrate relative to one another to separate the chemical reaction product from at least one member selected from the group consisting of the first substrate and the second substrate,

characterized in that, to control formation of a segregated phase domain structure within the chemical reaction product, a constituent of at least one member selected from the group consisting of the first precursor and the second precursor is provided in a quantity that substantially regularly periodically varies from a mean quantity with regard to basal spatial location,

wherein the segregated phase domain structure includes a segregated phase domain array,

wherein the quantity of the constituent is substantially regularly periodically increased by depositing a plurality of constituent sources that include an excess of the constituent relative to the mean quantity, and

wherein the quantity in which the constituent is provided periodically varies from the mean quantity with respect to basal spatial location on a sub-micron scale.

12. The method of claim 11, wherein the quantity in which the constituent is provided periodically varies from the mean quantity with respect to basal spatial location on a scale that is substantially a multiple of approximately five nanometers.

13. The method of claim 11, further comprising generating an electric field between the first substrate and the second substrate