Apparatus for making controlled segregated phase domain structures

• US 20070160770A1
• Filed: 01/12/2006
• Published: 07/12/2007
• Est. Priority Date: 01/12/2006
• Status: Active Grant

• Current Assignee: HelioVolt Corporation
• Original Assignee: HelioVolt Corporation
• Inventors: Stanbery, Billy
• Granted Patent: US 8,084,685 B2
• Time in Patent Office: Days
• US Class Current: 427/457
• CPC Class Codes: H01L 31/0322 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: Y02E 10/541 CuInSe2 material PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

An apparatus includes a first substrate; and a second substrate coupled to the first substrate, characterized in that, to control formation of a segregated phase domain structure within a chemical reaction product by controlling an amount of a constituent of a precursor that is present per unit surface area, at least one member selected from the group consisting of the first substrate and the second substrate defines a substantially regularly periodically varying relief with respect to basal spatial location.

Claims

1. An apparatus, comprising:

a first substrate; and

a second substrate coupled to the first substrate, the first substrate and the second substrate movable relative to one another,

characterized in that, to control formation of a segregated phase domain structure within a chemical reaction product by controlling an amount of a constituent of a precursor that is present per unit surface area, at least one member selected from the group consisting of the first substrate and the second substrate defines a substantially regularly periodically varying relief with respect to basal spatial location.

2. The apparatus of claim 1, wherein the first substrate and the second substrate are movable relative to one another to contact the first precursor located on the first substrate with a second precursor located on the second substrate.

3. The apparatus of claim 2, wherein the first substrate and the second substrate are movable relative to one another to separate a chemical reaction product from at least one member selected from the group consisting of the first substrate and the second substrate.

4. The apparatus of claim 1, further comprising a first precursor coupled to the first substrate and a second precursor coupled to the second substrate.

5. The apparatus of claim 1, further comprising a voltage source coupled to the first substrate and the second substrate to generate an electric field between the first substrate and the second substrate.

6. An apparatus, comprising:

a first substrate; and

a second substrate coupled to the first substrate, the first substrate and the second substrate movable relative to one another,

wherein the first substrate and the second substrate are movable relative to one another to i) contact the first precursor located on the first substrate with a second precursor located on the second substrate and ii) separate a chemical reaction product from at least one member selected from the group consisting of the first substrate and the second substrate,

characterized in that, to control formation of a segregated phase domain structure within a chemical reaction product by controlling an amount of a constituent of a precursor that is present per unit surface area, at least one member selected from the group consisting of the first substrate and the second substrate defines a substantially regularly periodically varying relief with respect to basal spatial location.

7. The apparatus of claim 6, further comprising a first precursor coupled to the first substrate and a second precursor coupled to the second substrate.

8. The apparatus of claim 6, further comprising a voltage source coupled to the first substrate and the second substrate to generate an electric field between the first substrate and the second substrate.