Method for manufacturing semiconductor device
First Claim
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1. A method for manufacturing a semiconductor device, the method comprising the steps of:
- forming a gate electrode on a semiconductor substrate by patterning a layer containing polysilicon;
forming a drift area in the semiconductor substrate by implanting one or more first dopants using the gate electrode as a mask;
forming a sidewall spacer at sides of the gate electrode; and
forming a source/drain area in the semiconductor substrate by implanting one or more second dopants using the gate electrode and the sidewall spacer as a mask.
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Abstract
Disclosed is a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device includes the steps of forming a gate electrode on a semiconductor substrate, forming a drift area in the semiconductor substrate by implanting a dopant using the gate electrode as a mask, forming a sidewall spacer at sides of the gate electrode, and forming a source/drain area in the semiconductor substrate by implanting a dopant using the gate electrode and the sidewall spacer as a mask.
15 Citations
15 Claims
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1. A method for manufacturing a semiconductor device, the method comprising the steps of:
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forming a gate electrode on a semiconductor substrate by patterning a layer containing polysilicon;
forming a drift area in the semiconductor substrate by implanting one or more first dopants using the gate electrode as a mask;
forming a sidewall spacer at sides of the gate electrode; and
forming a source/drain area in the semiconductor substrate by implanting one or more second dopants using the gate electrode and the sidewall spacer as a mask. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a semiconductor device, the method comprising the steps of:
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forming a first oxide layer on a semiconductor substrate;
depositing a polysilicon layer, a second oxide layer, and a first nitride layer on the first oxide layer and forming a gate stack by patterning the polysilicon layer, the second oxide layer, and the first nitride layer;
forming a drift area by implanting one or more first dopants into the semiconductor substrate using the gate stack as a mask;
removing the first nitride layer;
depositing a second nitride layer on the semiconductor substrate and forming a sidewall spacer by blanket etching the second oxide layer and the second nitride layer; and
forming a source/drain area in the semiconductor substrate by implanting one or more second dopants using the gate electrode and the sidewall spacer as a mask. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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Specification