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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20070164351A1
  • Filed: 11/20/2006
  • Published: 07/19/2007
  • Est. Priority Date: 01/17/2006
  • Status: Abandoned Application
First Claim
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1. A semiconductor device, comprising:

  • a substrate;

    isolation layers, each of which is formed in a trench formed on the substrate and has an insulating film and a conductive layer;

    a semiconductor layer of a first conductivity type for storing signal charges, formed between the isolation layers and isolated from the conductive layers by the insulating films;

    a semiconductor layer of a second conductivity type, formed under the semiconductor layer of the first conductivity type; and

    a transistor having a gate insulator film formed on the semiconductor layer of the first conductivity type and a gate electrode formed on the gate insulator film.

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