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Semiconductor device and fabricating method thereof

  • US 20070164370A1
  • Filed: 01/18/2006
  • Published: 07/19/2007
  • Est. Priority Date: 01/18/2006
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a substrate;

    a stacked gate structure disposed on the substrate, wherein the stacked gate structure comprises at least a dielectric layer and a gate sequentially stacked over the substrate;

    a doped region disposed on the respective sides of the stacked gate structure; and

    a high stress material layer disposed on the doped region.

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