MEMORY CELL COMPRISING A DIODE FABRICATED IN A LOW RESISTIVITY, PROGRAMMED STATE
First Claim
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1. A nonvolatile memory device comprising at least one memory cell which consists essentially of a diode and electrically conductive electrodes contacting the diode, wherein the diode is fabricated in a low resistivity, programmed state.
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Abstract
A memory device includes at least one diode memory cell. The diode is fabricated in a low resistivity, programmed state.
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21 Claims
- 1. A nonvolatile memory device comprising at least one memory cell which consists essentially of a diode and electrically conductive electrodes contacting the diode, wherein the diode is fabricated in a low resistivity, programmed state.
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12. A nonvolatile memory device, comprising a plurality of memory cells, wherein each memory cell comprises:
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a first electrode;
a polycrystalline silicon, germanium or silicon-germanium diode electrically contacting the first electrode; and
a second electrode electrically contacting the diode, wherein the second electrode comprises a titanium silicide, titanium germanide or titanium silicide-germanide layer having a C49 phase which physically contacts the diode. - View Dependent Claims (13, 14, 15, 16)
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17. A nonvolatile memory device comprising:
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a read/write memory cell comprising a first electrode, a diode which is fabricated in a low resistivity programmed state, and a second electrode; and
a means for applying a reverse bias above the diode'"'"'s critical voltage value to the diode to switch the diode from the low resistivity programmed state to a high resistivity, unprogrammed state, and for applying a forward bias to the diode to switch the diode to the low resistivity, programmed state. - View Dependent Claims (18, 19, 20, 21)
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Specification