ABNORMALITY DETECTION APPARATUS FOR SECONDARY BATTERY DEVICE
First Claim
1. An abnormality detection apparatus for a secondary battery device having n secondary batteries (where n is 2 or more) connected in series for obtaining a high battery voltage corresponding to the n secondary batteries, the apparatus comprising:
- n voltage detecting circuits which outputs high-level signals at a normal voltage in a range from a lower limit voltage to an upper limit voltage between both terminals of each of the n secondary batteries;
n N-channel field effect transistors having gates to which outputs of the n voltage detecting circuits are respectively supplied; and
n P-channel field effect transistors having gates to which drain voltages of the n N-channel field effect transistors are respectively supplied, wherein, in the n P-channel field effect transistors, a drain of a 1st P-channel field effect transistor is connected to a source of a 2nd P-channel field effect transistor, and successively a drain of the 2nd P-channel field effect transistor is connected to . . . a source of an n-th P-channel field effect transistor, thus detecting an abnormality by a voltage obtained at a drain of the n-th P-channel field effect transistor.
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Accused Products
Abstract
There is provided an abnormality detection apparatus for a secondary battery device having n secondary batteries (where n is 2 or more) connected in series for obtaining a high battery voltage. The apparatus includes n voltage detecting circuits which outputs high-level signals at a normal voltage between both terminals of each of the n secondary batteries, n N-channel field effect transistors having gates to which outputs of the n voltage detecting circuits are respectively supplied, and n P-channel field effect transistors having gates to which drain voltages of the n N-channel field effect transistors are respectively supplied. In the n P-channel field effect transistors, a drain of a P-channel field effect transistor is connected to a source of the next P-channel field effect transistor successively, thus detecting an abnormality by a voltage obtained at a drain of the n-th P-channel field effect transistor.
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Citations
6 Claims
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1. An abnormality detection apparatus for a secondary battery device having n secondary batteries (where n is 2 or more) connected in series for obtaining a high battery voltage corresponding to the n secondary batteries, the apparatus comprising:
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n voltage detecting circuits which outputs high-level signals at a normal voltage in a range from a lower limit voltage to an upper limit voltage between both terminals of each of the n secondary batteries;
n N-channel field effect transistors having gates to which outputs of the n voltage detecting circuits are respectively supplied; and
n P-channel field effect transistors having gates to which drain voltages of the n N-channel field effect transistors are respectively supplied, wherein, in the n P-channel field effect transistors, a drain of a 1st P-channel field effect transistor is connected to a source of a 2nd P-channel field effect transistor, and successively a drain of the 2nd P-channel field effect transistor is connected to . . . a source of an n-th P-channel field effect transistor, thus detecting an abnormality by a voltage obtained at a drain of the n-th P-channel field effect transistor. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification