SUBSTRATE SUPPORT HAVING HEAT TRANSFER SYSTEM

• US 20070165356A1
• Filed: 03/08/2007
• Published: 07/19/2007
• Est. Priority Date: 04/22/2003
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Ye, Yan, Ramaswamy, Kartik, Hoffman, Daniel, Hanawa, Hiroji, Ishikawa, Tetsuya, Nguyen, Andrew, Lue, Brian, Cheng, Wing, Kats, Semyon, Wong, Kwok
• Granted Patent: US 7,768,765 B2
• Time in Patent Office: Days
• US Class Current: 361/234
• CPC Class Codes: H01L 21/67109 mainly by convection

Abstract

A support for a substrate processing chamber comprises a fluid circulating reservoir comprising a channel having serpentine convolutions. A fluid inlet supplies a heat transfer fluid to the fluid circulating reservoir and a fluid outlet discharges the heat transfer fluid. In one version, the channel is doubled over to turn back upon itself.

Claims

1. A substrate support comprising:

(a) a substrate receiving surface;

(b) a fluid circulating reservoir comprising a channel having serpentine convolutions;

(c) a fluid inlet to supply a heat transfer fluid to the fluid circulating channel; and

(d) a fluid outlet to discharge the heat transfer fluid from the fluid circulating channel.

2. A support according to claim 1 wherein the channel is doubled over to turn back upon itself.

3. A support according to claim 1 wherein the channel curves back and forth along its length, each back and forth turn comprising a counter-flow of fluid passing through therein.

4. A support according to claim 3 comprising at least about 1 back and forth turn per 5 centimeters.

5. A support according to claim 1 wherein the channel comprises a first length having a first cross-section, and a second length having a second cross-section.

6. A support according to claim 1 wherein the serpentine convolutions have a roughened internal surface with a root mean square roughness value of at least about 125 microns.

7. A support according to claim 1 wherein the channel comprises a plurality of integral fins therein.

10. A support according to claim 1 wherein the substrate receiving surface is on a chuck capable of holding the substrate.

11. A support according to claim 1 wherein the chuck comprises an electrostatic chuck having an electrode covered by a dielectric, and an electrical contact to charge the electrode.

12. A substrate support according to claim 1 wherein the fluid circulating reservoir extends across at least about 60% of the area of the substrate receiving surface.

13. A support according to claim 1 wherein the fluid inlet comprises an inlet port near a peripheral portion of the substrate support, and the fluid outlet comprises an outlet port near a central portion of the substrate support.

14. A substrate processing chamber comprising a substrate support according to claim 1, the chamber further comprising:

a gas supply conduit to provide a gas into the chamber;

a gas energizer to energize the gas to form a plasma; and

an exhaust port to exhaust the gas from the chamber.

8. A support according to claim 8 wherein the integral fins have an aspect ratio of height to thickness of at least about 10:

1.

9. A support according to claim 9 wherein the channel comprises upper and lower walls, and the integral fins extends downwardly from the upper wall of the channel to define gaps with the lower wall.