Light source cable of lasing that is wavelength locked by an injected light signal

• US 20070165688A1
• Filed: 05/29/2003
• Published: 07/19/2007
• Est. Priority Date: 05/29/2003
• Status: Active Grant

• Current Assignee: Ericsson-Lg Company Limited (Telefonaktiebolaget LM Ericsson)
• Original Assignee: Novera Optics, Inc. (Lg-Nortel Company Limited)
• Inventors: Lee, Chang-Hee, Sorin, Wayne
• Granted Patent: US 7,515,626 B2
• Time in Patent Office: Days
• US Class Current: 372/71
• CPC Class Codes: H04B 10/2587 using a single light source for multiple stations
• CPC Class Codes: H04B 10/506 Multiwavelength transmitters
• CPC Class Codes: H04J 14/02 Wavelength-division multiplex systems
• CPC Class Codes: H04J 14/0226 Fixed carrier allocation, e.g. according to service
• CPC Class Codes: H04J 14/0246 using one wavelength per ONU
• CPC Class Codes: H04J 14/025 using one wavelength per ONU, e.g. for transmissions from-ONU-to-OLT or from-ONU-to-ONU
• CPC Class Codes: H04J 14/0282 WDM tree architectures

Abstract

Various methods, systems, and apparatuses are described in which a light source (101) capable of lasing is wavelength locked by an injected light signal. The light source (101) capable of lasing, such as a Fabry-Perot laser diode, may have antireflective coating on one or more facets of the light source (101) capable of lasing. The light source (101) capable of lasing receives a spectral slice of a light signal from a broadband light source (113) to wavelength lock the output wavelength of the light source (101) capable of lasing within the bandwidth of the injected light signal. A current pump (141) may bias the light source (101) capable of lasing to operate as a reflective regenerate semiconductor optical amplifier so that the injected light is reflected back out a front facet after being amplified and wavelength locked. The current pump (141) may also bias the light source (101) capable of lasing such that the externally injected narrow-band light signal into the light source (101) capable of lasing suppresses the lasing modes outside of the bandwidth of injected incoherent light.

Claims

1. An apparatus, comprising:

a light source capable of lasing having antireflective coating on one or more facets of the light source capable of lasing, wherein the light source capable of lasing to receive a spectral slide of a light signal from a broadband light source to wavelength lock an output wavelength of the light source capable of lasing within the bandwidth of the injected light signal; and

a current pump to bias the light source capable of lasing such that the injected light signal into the light source capable of lasing suppresses lasing modes outside of the bandwidth of the injected light signal.

2. The apparatus of claim 1, wherein the light source capable of lasing is a Fabry-Perot laser diode.

3. The apparatus of claim 2, further comprising:

The Fabry-Perot laser diode having a laser chip with two or more cavity modes, wherein the bandwidth of the injected light signal and a size of the laser chip are matched to approximately cause wavelengths in the bandwidth of the injected light signal to overlap with one or more cavity modes of the Fabry-Perot laser diode.

4. The apparatus of claim 3, wherein the size of the laser chip has a chip length of greater than 450 microns.

5. The apparatus of claim 2, wherein an optical reflectivity for a front facet may have values that can range from 0.1% to 25%.

6. The apparatus of claim 2, wherein an optical reflectivity for a back facet may have values that can range from 10% to 100%.

7. The apparatus of claim 2, wherein the current pump to bias the Fabry-Perot laser diode to operate as a reflective regenerative semiconductor optical amplifier.

8. The apparatus of claim 2, wherein the Fabry-Perot laser diode having antireflective coating on one or more facets to generate a side-mode suppression ratio having values greater than 3 dB.

9. The apparatus of claim 2, further comprising:

a controller to provide an optimized gain for the injected light signal by changing the temperature of the Fabry-Perot laser diode to shift one or more cavity modes of the Fabry-Perot laser diode to overlap with the bandwidth of the injected light signal.

10. The apparatus of claim 2, further comprising:

a controller to provide an optimized gain for the injected light signal by changing the current applied to the Fabry-Perot laser diode to shift one or more cavity modes of the Fabry-Perot laser diode to overlap with the bandwidth of the injected light signal.

11. The apparatus of claim 1, wherein the apparatus is part of a passive optical network, further comprising:

a broadband light source to supply an optical signal containing a first band of wavelengths to a multiplexer/demultiplexer, wherein the Fabry-Perot laser diode to couple to a port of the multiplexer/demultiplexer to receive the spectral slice of the light signal from the broadband light source.

12. The apparatus of claim 11, wherein the multiplexer/demultiplexer to have wavelength spacing between individual wavelength channels between 25 gigahertz and 400 gigahertz.

13. The apparatus of claim 2, further comprising:

a modulator to data modulate an output signal generated by the Fabry-Perot laser diode with a data stream, wherein the laser chip of the Fabry-Perot laser diode has a gain-bandwidth value of greater than 40 nanometers to support wavelength locking over that bandwidth after being injected with the input light signal while still supporting a useable signal quality when the Fabry-Perot laser diode is modulated with the data stream.

14. The apparatus of claim 2, wherein a gain region of the laser chip has one or more chirped quantum wells in the gain region of the laser chip.

15. The apparatus of claim 2, wherein a gain region of the laser chip has one or more strained quantum wells in the gain region of the laser chip.

16. The apparatus of claim 2, wherein a gain region of the laser chip has one or more quantum dots in the gain region of the laser chip.

17. The apparatus of claim 2, wherein a gain region of the laser chip is modified for increasing the gain-bandwidth of the Fabry-Perot laser diode by an increased doping beyond a standard doping in the gain region of the laser chip.

18. The apparatus of claim 2, wherein the pump to supply a bias pump current to the Fabry-Perot laser diode having a value that is between 0.9 to 1.5 times a lasing threshold current that occurs when no input light signal is injected into the laser.

19. The apparatus of claim 2, further comprising:

a modulator to directly data modulate an output signal generated by the Fabry-Perot laser diode, wherein an extinction ratio of the directly modulated signal is greater than 5 dB.

20. The apparatus of claim 2, further comprising:

an optical fiber coupled to an input facet of the Fabry-Perot laser diode and aligned with the input facet to achieve a coupling efficiency of greater than 20%.

21. The apparatus of claim 2, further comprising:

an input facet of the Fabry-Perot laser diode;

wherein the injected light signal received on the input facet to have a power spectral density between minus 10 dBm/0.1 nm bandwidth to minus 30 dBm/0.1 nm bandwidth.

22. The apparatus of claim 2, further comprising:

a single mode optical fiber coupled to a first facet of the Fabry-Perot laser diode, wherein the power of the output wavelength of the Fabry-Perot laser diode coupled back into the single mode optical fiber can be between +3 dBm and −

20 dBm.

23. The apparatus of claim 2, further comprising:

an input facet of the Fabry-Perot laser diode, wherein the injected light signal received on the input facet to have a polarization ratio between 0 dB and 3 dB.

24. The apparatus of claim 2, further comprising:

an input facet of the Fabry-Perot laser diode, wherein the bandwidth of the injected light signal received on the input facet is to be less than 500 gigahertz.

25. The apparatus of claim 2, wherein the current pump to bias the Fabry-Perot laser diode to operate above a lasing threshold when no input light signal is injected into the laser and to suppress the gain of the laser to below that of the free-running Fabry-Perot laser diode when the light signal is injected into the Fabry-Perot laser diode.

26. An apparatus, comprising:

a light source capable of lasing having one or more facets and a laser chip with two or more cavity modes, wherein a first facet of the light source capable of lasing to receive a spectral slice of a light signal from a broadband light source to wavelength lock the output wavelength of the light source capable of lasing within the bandwidth of the injected light signal and the injected light signal is reflected back out the first facet after being amplified and wavelength locked; and

a current pump to bias the light source capable of lasing to operate as a reflective regenerative semiconductor optical amplifier, wherein the bandwidth of the injected light signal and a size of the laser chip cooperate to approximately cause wavelengths in the bandwidth of the injected light signal to overlap with one or more cavity modes of the light source capable of lasing independent of an external device effecting the light source capable of lasing shifting the mode of the light source capable of lasing.

27. The apparatus of claim 26, wherein the light source capable of lasing is a Fabry-Perot laser diode.

28. The apparatus of claim 27, further comprising:

a single mode optical fiber coupled to a first facet of the Fabry-Perot laser diode, wherein the power of the output wavelength of the Fabry-Perot laser diode coupled back into the single mode optical fiber can be between +3 dBm and −

20 dBm.

29. The apparatus of claim 27, wherein the current pump to bias the Fabry-Perot laser diode to operate above a lasing threshold when no input light signal is injected into the laser and to suppress the gain of the laser to below that of the free-running Fabry-Perot laser diode when the light signal is injected into the Fabry-Perot laser diode.

30. The apparatus of claim 27, wherein the pump to supply a bias pump current to the Fabry-Perot laser diode having a value that is between 0.9 to 1.5 times a lasing threshold current that occurs when no input light signal is injected into the laser.

31. The apparatus of claim 27, further comprising:

a modulator to directly data modulate an output signal generated by the Fabry-Perot laser diode, wherein an extinction ratio of the directly modulated signal is greater than 5 dB.

32. The apparatus of claim 27, further comprising:

a modulator to directly data modulate the Fabry-Perot laser diode with a data stream;

wherein the laser chip of the Fabry-Perot laser diode has a gain-bandwidth value of greater than 40 nanometers to support wavelength locking over that bandwidth after being injected with the input light signal while supporting useable signal quality when the Fabry-Perot laser diode is modulated with the data stream.

33. The apparatus of claim 27, wherein at least one of the facets has antireflective coating.

34. The apparatus of claim 27, wherein the apparatus is part of a passive optical network, further comprising:

a broadband light source to supply an optical signal containing a first band of wavelengths to a multiplexer/demultiplexer, wherein the FP LD to couple to a port of the multiplexer/demultiplexer to receive the spectral slice of the light signal from the broadband light source.

35. The apparatus of claim 27, wherein a gain region of the laser chip has one or more chirped quantum wells in the gain region of the laser chip.

36. The apparatus of claim 27, wherein a gain region of the laser chip has one or more strained quantum wells in the gain region of the laser chip.

37. The apparatus of claim 27, wherein a gain region of the laser chip has one or more quantum dots in the gain region of the laser chip.

38. The apparatus of claim 27, wherein a gain region of the laser chip is modified for increasing the gain-bandwidth of the Fabry-Perot laser diode by an increased doping beyond a standard doping in the gain region of the laser chip.

39. The apparatus of claim 27, wherein the pump current to bias the Fabry-Perot laser diode generates a side-mode suppression ratio having values greater than 3 dB for Fabry-Perot modes outside the bandwidth of the injected light signal.

40. The apparatus of claim 27, wherein the size of the laser chip has a chip length of greater than 450 microns.

41. The apparatus of claim 27, further comprising:

an input facet of the Fabry-Perot laser diode, wherein the injected light signal received on the input facet to have a polarization ratio between 0 dB and 3 dB.

42. The apparatus of claim 27, further comprising:

an input facet of the Fabry-Perot laser diode, wherein the bandwidth of the injected narrow-band light signal received on the input facet is to be less than 500 gigahertz.

43. The apparatus of claim 27, further comprising:

an input facet of the Fabry-Perot laser diode, wherein the injected narrow-band light signal received on the input facet to have a power spectral density between −

10 dBm/0.1 nm bandwidth to −

30 dBm/0.1 nm bandwidth.

44. A multi-channel passive optical network wavelength division multiplexing system, comprising:

a broadband light source that generates a broadband light signal;

a demultiplexer that slices spectrally the broadband light signal to produce a plurality of narrow-band light signals;

a first light source capable of lasing to couple at a first output end of the demultiplexer, wherein the first light source capable of lasing has a first laser chip with a first center wavelength and is wavelength locked by a first injected spectrally-sliced narrow-band light signal; and

a second light source capable of lasing to couple at a second output end of the demultiplexer, wherein, the second light source capable of lasing has a second laser chip with a second center wavelength and is wavelength locked by a second injected spectrally-sliced narrow-band light signal.

45. The multi-channel passive optical network wavelength division multiplexing system of claim 44, wherein the bandwidth of the wavelength locking range of the first light source capable of lasing and the bandwidth of the wavelength locking range of the second light source capable of lasing combine to be equal or greater than the sum of the operating range of the system bandwidth, the variation in the center wavelength due manufacturing tolerances, and an offset in a gain curve due to temperature changes.

46. The multi-channel passive optical network wavelength division multiplexing system of claim 44, further comprising

a current pump to bias a first light source capable of lasing to operate as a reflective regenerative semiconductor optical amplifier.

47. The multi-channel passive optical network wavelength division multiplexing system of claim 44, wherein the first injected narrow-band light signal into the first light source capable of lasing suppresses the lasing of the Fabry-Perot modes outside of the bandwidth of the first injected narrowband light signal.

48. The multi-channel passive optical network wavelength division multiplexing system of claim 44, wherein the Fabry-Perot modes outside of the bandwidth of the first injected narrow-band light signal incur a side mode suppression ratio of three decibels or more.