Glass material for use at high frequencies

• US 20070166520A1
• Filed: 05/23/2003
• Published: 07/19/2007
• Est. Priority Date: 05/23/2002
• Status: Active Grant

• Current Assignee: Schott AG (Carl-Zeiss-Stiftung)
• Original Assignee: Schott AG (Carl-Zeiss-Stiftung)
• Inventors: Mund, Dietrich, Leib, Jurgen
• Granted Patent: US 8,273,671 B2
• Time in Patent Office: Days
• US Class Current: 428/209
• CPC Class Codes: C03B 19/00 Other methods of shaping glass manufacture or treatment of flakes, fibres or filaments from softened glass, minerals or slags C03B37/00
• CPC Class Codes: C03C 14/006 the non-glass component being in the form of microcrystallites, e.g. of optically or electrically active material
• CPC Class Codes: C03C 15/00 Surface treatment of glass, not in the form of fibres or filaments, by etching etching or surface-brightening compositions, in general C09K13/00
• CPC Class Codes: C03C 17/02 with glass C03C17/34, C03C17/44 take precedence
• CPC Class Codes: C03C 17/34 with at least two coatings having different compositions C03C17/44 takes precedence
• CPC Class Codes: C03C 2214/16 Microcrystallites, e.g. of optically or electrically active material
• CPC Class Codes: C03C 2217/21 Oxides
• CPC Class Codes: C03C 2218/15 from the vapour phase
• CPC Class Codes: C03C 2218/32 After-treatment
• CPC Class Codes: C03C 2218/328 Partly or completely removing a coating
• CPC Class Codes: C03C 2218/33 by etching
• CPC Class Codes: C03C 2218/355 Temporary coating
• CPC Class Codes: C03C 3/083 containing aluminium oxide or an iron compound
• CPC Class Codes: C03C 3/089 containing boron
• CPC Class Codes: C03C 4/12 for luminescent glass; for fluorescent glass
• CPC Class Codes: C23C 14/10 Glass or silica
• CPC Class Codes: H01L 21/02129 the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
• CPC Class Codes: H01L 21/02161 the material containing more than one metal element
• CPC Class Codes: H01L 21/02263 deposition from the gas or vapour phase
• CPC Class Codes: H01L 21/31616 Deposition of Al2O3
• CPC Class Codes: H01L 21/31625 : Deposition of boron or phosphorus doped silicon oxide, e.g. BSG, PSG, BPSG
• CPC Class Codes: H01L 21/50 : Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
• CPC Class Codes: H01L 21/56 : Encapsulations, e.g. encapsulation layers, coatings
• CPC Class Codes: H01L 2223/6627 : Waveguides, e.g. microstrip line, strip line, coplanar line
• CPC Class Codes: H01L 2224/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/10 : characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
• CPC Class Codes: H01L 23/291 : Oxides or nitrides or carbides, e.g. ceramics, glass
• CPC Class Codes: H01L 23/3114 : the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 23/481 : Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/49894 : Materials of the insulating layers or coatings
• CPC Class Codes: H01L 23/5329 : Insulating materials
• CPC Class Codes: H01L 23/66 : High-frequency adaptations
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01011 : Sodium [Na]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/0102 : Calcium [Ca]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0106 : Neodymium [Nd]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/1903 : including wave guides
• CPC Class Codes: H01L 2924/19033 : being a coplanar line type
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H01P 11/003 : Manufacturing lines with conductors on a substrate, e.g. strip lines, slot lines
• CPC Class Codes: H01P 3/003 : Coplanar lines
• CPC Class Codes: H05K 2201/0179 : Thin film deposited insulating layer, e.g. inorganic layer for printed capacitor
• CPC Class Codes: H05K 3/28 : Applying non-metallic protective coatings H05K3/0091 takes precedence; methods for intermediate insulating layers for build-up multilayer circuits H05K3/4673
• CPC Class Codes: H05K 3/467 : Adding a circuit layer by thin film methods H05K3/4647 takes precedence
• CPC Class Codes: H10K 50/805 : Electrodes
• CPC Class Codes: H10K 50/8426 : Peripheral sealing arrangements, e.g. adhesives, sealants
• CPC Class Codes: H10K 50/844 : Encapsulations
• CPC Class Codes: H10K 50/846 : comprising getter material or desiccants
• CPC Class Codes: H10K 50/85 : Arrangements for extracting light from the devices
• CPC Class Codes: Y02P 40/57 : Improving the yield, e-g- reduction of reject rates
• CPC Class Codes: Y10T 428/24917 : including metal layer

Abstract

To improve the radio-frequency properties of radio-frequency substrates or radio-frequency conductor arrangements, the invention proposes a glass material for producing insulation layers for radio-frequency substrates or radio-frequency conductor arrangements, which, as an applied layer, in particular with a layer thickness in the range between 0.05 μm and 5 mm, has a loss factor tan δ of less than or equal to 70*10⁻⁴ in at least a frequency range above 1 GHz.

Claims

1. A glass material for producing insulation layers for radio-frequency substrates or radio-frequency conductor arrangements, comprising:

a composition, in percent by weight, of;

SiO₂ 71±

5,

B₂O₃ 26±

5,

Al₂O₃ 1±

0.2,

K₂O 1±

0.2,

Li₂O 0.5±

0.2,

Na₂O 0.5±

0.2, and

a layer thickness in the range between 0.05 μ

m and 5 mm, wherein the glass material has a loss factor tan δ

of less than or equal to 70*10<sup>−

4</sup> in at least a frequency range above 1 GHz.

3. The glass material as claimed in claim 1, wherein said loss factor tan δ

is less than or equal to 50*10<sup>−

4</sup> at frequencies in the range around 40 GHz.

2. An insulation layer for radio-frequency substrates or radio-frequency conductor arrangements, comprising:

a glass material having a layer thickness in the range between 0.05 μ

m and 5 mm; and

a loss factor tan δ

of less than or equal to 70*10<sup>−

4</sup> in at least one frequency range above 1 GHz.

4. The insulation layer as claimed in claim 2, wherein said loss factor tan δ

is less than or equal to 30*10<sup>−

4</sup> at a frequency of 40 GHz.

5. The insulation layer as claimed in claim 2, wherein said glass material is an evaporated glass material.

6. The insulation layer as claimed in claim 5, wherein said evaporated glass material has been evaporated by electron beam evaporation.

7. The insulation layer as claimed in claim 2, wherein said glass material is produced at a working point of less than 1300°

C.

8. The insulation layer as claimed in claim 2, further comprising a relative dielectric constant ε

_R of less than or equal to five in at least one frequency range above 1 GHz.

9. The insulation layer as claimed in claim 2, further comprising a relative dielectric constant ε

_R of less than or equal to 5 at a frequency of 40 GHz.

10. The insulation layer as claimed in claim 2, further comprising a coefficient of thermal expansion α

_20-300 in the range from 2.9×

10<sup>−

6</sup> K<sup>−

1</sup> to 3.5×

10<sup>−

6</sup> K<sup>−

1</sup> in a temperature range from 20°

C. to 300°

C.

11. The insulation layer as claimed in claim 2, further comprising a coefficient of thermal expansion α

_20-300 of (3.2±

0.2)×

10<sup>−

6</sup> K<sup>−

1</sup> in a temperature range from 20°

C. to 300°

C.

13. The insulation layer as claimed in claim 2, wherein said glass material is acid-resistant to acid resistance class 2.

14. The insulation layer as claimed in claim 2, wherein said glass material is alkali-resistant to alkali resistance class 3.

15. The insulation layer as claimed in claim 2, wherein said glass material has a composition, in percent by weight, comprising:

16. The insulation layer as claimed in claim 2, wherein said glass material has a composition, in percent by weight, comprising:

17. The insulation layer as claimed in claim 2, wherein said glass material has a composition, in percent by weight, comprising:

18. The insulation layer as claimed in claim 2, wherein said glass material has a composition, in percent by weight, comprising:

12. (canceled)

19. A process for producing a component with a radio-frequency conductor arrangement, comprising the steps of:

depositing a structured glass layer having at least one opening over a contact-connection region on a substrate; and

applying at least one conductor structure to the structured glass layer, wherein the at least one conductor structure has electrical contact with the contact-connection region.

20. The process as claimed in claim 19, wherein the step of depositing the structured glass layer comprises evaporating a glass material.

21. The process as claimed in claim 19, further comprising applying at least one passive electrical component, which is in contact with the at least one conductor structure, to the structured glass layer.

22. The process as claimed in claim 19, further comprising repeating the steps of depositing a structured glass layer and of applying at least one conductor structure a number of times.

23. The process as claimed in claim 19, wherein the step of depositing the structured glass layer comprises the steps of:

applying a structured interlayer to cover the contact-connection region;

applying the structured glass layer by evaporation coating to the substrate and the structured interlayer which is present thereon, the thickness of the structured glass layer being less than that of the structured interlayer; and

removing the structured interlayer so that regions of the structured glass layer which are located on the structured interlayer are lifted with it.

24. The process as claimed in claim 23, wherein prior to the application of the structured glass layer by evaporation coating, the method further comprises applying a conductive material that projects with respect to regions adjacent to the contact-connection region to the contact-connection region, and covering the conductive material by the structured interlayer.

25. The process as claimed in claim 23, wherein the step of applying the structured interlayer comprises printing or photolithographic structuring.

26. The process as claimed in claim 19, wherein the step of applying the at least one conductor structure comprises the steps of applying a negatively structured interlayer and depositing a conductive material.

27. The process as claimed in claim 19, wherein the at least one conductive structure is applied to the substrate prior to the step of depositing the structured glass layer.

28. The process as claimed in claim 19, further comprising the step of depositing a final glass layer and producing at least one via in the final glass layer.

29. The process as claimed in claim 19, wherein the substrate comprises a semiconductor substrate with active semiconductor regions, and wherein the step of applying the at least one conductor structure comprises connecting the at least one conductor structure to a connection location of the active semiconductor region.

30. The process as claimed in claim 19, wherein the step of applying the at least one conductor structure comprises connecting the at least one conductor structure to a via through the substrate.

31. The process as claimed in claim 19, wherein the substrate, during the application of the structured glass layer, is held at a temperature between 50°

C. and 200°

C.

32. The process as claimed in claim 19, wherein the step of depositing a structured glass layer comprises evaporation coating with a deposition rate of at least 0.1 μ

m of layer thickness per minute.

33. The process as claimed in claim 19, further comprising the step of filling in the at least one opening with a conductive material.

34. The process as claimed in claim 19, wherein the step of depositing the structured glass layer on the substrate is carried out while the substrate is joined to a wafer.

35. The process as claimed in claim 19, wherein the step of depositing the structured glass layer comprises plasma ion assisted deposition (PIAD).

36. A component having a radio-frequency conductor arrangement, comprising:

a substrate having at least one contact-connection region;

a glass layer on at least one side of the substrate, the glass layer having at least one opening with a via in electrical contact with the contact-connection region, the glass layer having a composition, in percent by weight, comprising SiO₂ 40 to 90, B₂O₃ 10 to 40, Al₂O₃ 0 to 5, K₂O 0 to 5, Li₂O 0 to 3, and Na₂O 0 to 3; and

at least one conductor structure on the glass layer, the at least one conductor structure being in contact with the via.

37. The component as claimed in claim 36, further comprising at least one passive electrical component on the glass layer, wherein the at least one passive electrical component is connected to the at least one conductor structure.

38. The component as claimed in claim 36, further comprising a second glass layer on the at least one side of the substrate and a second conductor structure on the second glass layer, wherein the conductor structure on the glass layer is in electrical contact with the second conductor structure on the second glass layer by the via.

39. The component as claimed in claim 36, wherein the substrate comprises a semiconductor substrate with at least one active semiconductor region, wherein the at least one active semiconductor region is connected to the conductor structure.

40-56. -56. (canceled)