Semiconductor device manufacturing method, mask manufacturing method, and exposure method

• US 20070166627A1
• Filed: 04/26/2006
• Published: 07/19/2007
• Est. Priority Date: 01/16/2006
• Status: Active Grant

• Current Assignee: Fujitsu Semiconductor Limited (Fujitsu Limited)
• Original Assignee: Fujitsu Limited
• Inventors: Sugimoto, Fumitoshi
• Granted Patent: US 7,820,364 B2
• Time in Patent Office: Days
• US Class Current: 430/5
• CPC Class Codes: G03F 1/70 Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
• CPC Class Codes: G03F 7/70466 Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature stitching G03F7/70475

Abstract

In order to form a transfer pattern of desired size with high accuracy, a method for manufacturing a semiconductor device includes a process of forming the transfer pattern including a line whose width and angle varies, by performing multiple exposure using a plurality of masks having different patterns over different mask substrates.

Claims

1. A method for manufacturing a semiconductor device, comprising:

forming a transfer pattern including a line whose width or angle varies, by performing multiple exposure using a plurality of masks having different patterns over different mask substrates.

2. The method for manufacturing the semiconductor device according to claim 1,

wherein the plurality of different patterns are formed by dividing a mask pattern for forming the transfer pattern in a portion at which the line width varies, and

wherein the transfer pattern is formed in combination with the plurality of different patterns by performing exposure using the plurality of masks.

3. The method for manufacturing the semiconductor device according to claim 1,

wherein the plurality of different patterns are formed by dividing a mask pattern for forming the transfer pattern in a corner portion at which the line angle varies, and

wherein the pattern is formed in combination with the plurality of different patterns by performing exposure using the plurality of masks.

4. The method for manufacturing the semiconductor device according to claim 1,

wherein, as the plurality of masks, a mask having a basic pattern for forming the transfer pattern including a portion at which the line width varies and a mask having a correction pattern in a position corresponding to a narrow width portion of the transfer pattern are used.

5. The method for manufacturing the semiconductor device according to claim 1,

wherein, as the plurality of masks, a mask having a basic pattern for forming the transfer pattern including a corner portion at which the line angle varies and a mask having a correction pattern in a position corresponding to a portion in the vicinity of the corner portion of the transfer pattern are used.

6. The method for manufacturing the semiconductor device according to claim 5,

wherein the mask having the basic pattern includes an L-, T- or U-shaped pattern.

7. The method for manufacturing the semiconductor device according to claim 1,

wherein the mask has a dummy pattern in the vicinity of the pattern.

8. A method for manufacturing a semiconductor device, comprising:

forming a transfer pattern including a hole of a desired size by performing multiple exposure using a plurality of masks having different patterns over different mask substrates,

wherein, as the plurality of masks, a mask having a pattern including a hole of a desired size and a mask having a pattern including a hole of a smaller size than the desired size are used.

9. A mask manufacturing method in a photolithography process for use in forming a transfer pattern including a line whose width or angle varies,

wherein a plurality of masks are manufactured by dividing a mask pattern for forming the transfer pattern, and by forming respective patterns over different mask substrates.

10. The mask manufacturing method according to claim 9,

wherein the plurality of masks are manufactured by dividing the mask pattern in a portion at which the line width varies.

11. The mask manufacturing method according to claim 9,

wherein the plurality of masks are manufactured by dividing the mask pattern in a corner portion at which the line angle varies.

12. The mask manufacturing method according to claim 9,

wherein the plurality of masks are manufactured by dividing the mask pattern into three patterns or more.

13. An exposure method comprising:

forming a transfer pattern including a line whose width or angle varies, by performing exposure using one mask having one pattern over one mask substrate, and performing exposure using another mask having another pattern over another mask substrate.

14. The exposure method according to claim 13,

wherein the one mask includes a basic pattern for forming the transfer pattern including a portion at which the line width varies,

while the other mask includes a correction pattern in a position corresponding to a narrow width portion of the transfer pattern.

15. The exposure method according to claim 13,

wherein the one mask includes a basic pattern for forming the transfer pattern including a corner portion at which the line angle varies,

while the other mask includes a correction pattern in a position corresponding to a portion in the vicinity of the corner portion of the transfer pattern.

16. The exposure method according to claim 15,

wherein the mask having the basic pattern includes an L-, T- or U-shaped pattern.

17. The exposure method according to claim 13,

wherein multiple exposure is performed using a plurality of masks having different patterns as the other mask.