LIGHT EMITTING DIODES (LEDs) WITH IMPROVED LIGHT EXTRACTION BY ROUGHENING

• US 20070166851A1
• Filed: 12/29/2006
• Published: 07/19/2007
• Est. Priority Date: 01/11/2005
• Status: Active Grant

• Current Assignee: Semileds Optoelectronics Company Limited (SemiLEDs Inc)
• Original Assignee: Semileds Optoelectronics Company Limited (SemiLEDs Inc)
• Inventors: Chu, Chen-Fu, Fan, Feng-Hsu, Cheng, Hao-Chun, Tran, Chuong, Doan, Trung
• Granted Patent: US 7,563,625 B2
• Time in Patent Office: Days
• US Class Current: 438/22
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.

Claims

1. A method comprising:

providing a light-emitting diode (LED) wafer assembly, comprising;

a conductive substrate;

a p-doped layer disposed above the conductive substrate;

an active layer disposed above the p-doped layer;

an n-doped layer disposed above the active layer;

applying a mask to a surface of the n-doped layer;

etching the surface of the n-doped layer such that etched pits are formed in the surface;

removing the mask; and

roughening or texturing the surface of the n-doped layer including the etched pits.

2. The method of claim 1, wherein the mask comprises at least one of Ni, SiO₂, Si₃N₄, and photoresist.

3. The method of claim 1, wherein the mask has a checkerboard or honeycomb pattern.

4. The method of claim 1, wherein etching the surface comprises at least one of wet etching, photoenhanced wet etching, and dry etching.

5. The method of claim 1, wherein etching the surface of the n-doped layer comprises etching the n-doped layer within 1 to 10 nm of the active layer.

6. The method of claim 1, wherein etching the surface of the n-doped layer comprises etching completely through at least a portion of the n-doped layer and etching at least partially through at least a portion of the active layer.

7. The method of claim 1, wherein etching the surface of the n-doped layer comprises etching completely through at least portions of the n-doped layer and the active layer and at least partially through the p-doped layer.

8. The method of claim 1, wherein roughening or texturing the surface of the n-doped layer comprises at least one of wet etching, photoenhanced wet etching, dry etching, and applying objects to the surface including the etched pits.

9. The method of claim 1, wherein the conductive substrate comprises a single layer or multiple layers of at least one of Cu, Ni, Ni—

Co, Ag, Au, Cu—

Co, Cu—

Mo, Ni/Cu, Cu/Ni—

Co/Cu, Cu/Ni—

Co/Cu/Ni—

Co, and Ni/Cu—

Mo.

10. The method of claim 1, wherein the LED wafer assembly comprises a reflective layer disposed between the conductive substrate and the p-doped layer.

11. The method of claim 10, wherein the reflective layer comprises at least one of Al, Ag, Au, Ni, Pt, Cr, Ti, Pd, Ti/Ag, Ti/Al, Ni/Ag, Ni/Al, Al/Ni/Au, Ag/Ni/Au, and alloys thereof.

12. A method comprising:

providing a light-emitting diode (LED) wafer assembly, comprising;

a conductive substrate;

a p-doped layer disposed above the conductive substrate;

an active layer disposed above the p-doped layer;

an n-doped layer disposed above the active layer;

applying a mask to a surface of the n-doped layer;

etching the surface of the n-doped layer such that etched pits are formed in the surface;

removing the mask; and

immersing the surface of the n-doped layer including the etched pits in an electrolytic solution;

applying an electrical bias to the conductive substrate; and

illuminating the surface such that photoelectrochemical (PEC) oxidation and etching occurs to roughen the surface of the n-doped layer including surfaces of the etched pits.

13. The method of claim 12, further comprising forming conductive contacts on the n-doped layer, wherein the conductive contacts act as a mask during the PEC oxidation and etching.

14. The method of claim 12, wherein the electrolytic solution can be a combination of an oxidizing agent and either an acid or an alkaline solution.

15. The method of claim 14, wherein the oxidizing agent comprises at least one of H₂O₂ and K₂S₂O₈.

16. The method of claim 14, wherein the acid solution comprises at least one of H₂SO₄, HF, HCI, H₃PO₄, HNO₃, and CH₃COOH.

17. The method of claim 14, wherein the alkaline solution comprises KOH, NaOH, NH₄OH, or combinations thereof.

18. The method of claim 12, wherein the electrical bias ranges from −

10 V to +10 V.

19. A method comprising:

applying a mask to a surface of a light-emitting diode (LED) wafer;

etching the surface of the LED wafer such that etched pits are formed in the surface;

removing the mask; and

roughening or texturing the surface of the LED wafer including the etched pits.

20. The method of claim 19, wherein the mask comprises at least one of Ni, SiO₂, Si₃N₄, and photoresist.

21. The method of claim 19, wherein etching the surface of the LED wafer comprises at least one of wet etching, photoenhanced wet etching, and dry etching.

22. The method of claim 19, wherein roughening or texturing the surface of the LED wafer comprises at least one of wet etching, photoenhanced wet etching, dry etching, and applying objects to the surface including the etched pits.