Mirror package and method of manufacturing the mirror package

• US 20070166864A1
• Filed: 05/22/2006
• Published: 07/19/2007
• Est. Priority Date: 12/30/2005
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Seung, Choi, Min, Lee, Hwa, Choi, Won
• Granted Patent: US 7,696,104 B2
• Time in Patent Office: Days
• US Class Current: 438/52
• CPC Class Codes: B81B 7/0067 for controlling the passage of optical signals through the package
• CPC Class Codes: G02B 26/0833 the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD G02B26/0825 takes precedence; micromechanical devices in general B81B
• CPC Class Codes: G02B 27/0018 with means for preventing ghost images anti-reflection coatings G02B1/11
• CPC Class Codes: G02B 5/005 Diaphragms for cameras G03B9/02

Abstract

A mirror package is provided which can reflect a laser to an external screen according to a video signal when the laser enters from outside, and a method of manufacturing the mirror package. The mirror is packaged with a glass to protect from external contamination, an inlet and an outlet are formed by, for example, an anisotropic etching on the glass and blocks a reflected light reflected from the glass. The mirror package is formed as a set, combined on a wafer using a wafer level package and diced to individual chips. Subsequently, a productivity is improved and a ghost image or phenomenon is removed.

Claims

1. A method of manufacturing a mirror package in a mirror structure, the method comprising:

providing a silicon wafer;

forming an inlet, through which a laser is able to pass, and an outlet, through which the laser is able to be emitted, by anisotropic etching the silicon wafer; and

forming a wafer module by combining the silicon wafer, a glass wafer made of a transparent material and a mirror wafer formed with the mirror structure, so that the glass wafer combines with a surface of the silicon wafer where the inlet and the outlet are substantially formed.

2. The method of claim 1, wherein the forming of the inlet and outlet comprises a wet etching using any one of potassium hydroxide (KOH), ethylene diamine pyrotechol (EDP), and tetramethyle ammonium hydroxide (TMAH).

3. The method of claim 1, wherein a plurality of silicon wafers are formed so that the inlet and the outlet formed on each of the plurality of silicon wafers overlap each other.

4. The method of claim 3, wherein the size of the inlet and the outlet formed on each of the plurality of silicon wafers decreases as a distance from the glass wafer increases.

5. The method of claim 3, wherein each of the plurality of silicon wafers respectively forms the inlet and the outlet by a dry etching, and is combined with the glass wafer, so that the size of the inlet and outlet decrease as a distance from the glass wafer increases.

6. The method of claim 1, further comprising:

forming a plurality of inlets and outlets on the silicon wafer;

forming a set of the mirror structures on the mirror wafer;

forming a combined wafer by combining the silicon wafer, the glass wafer and the mirror wafer together; and

dicing the combined wafer to include the inlet, the outlet and the mirror structure in each diced combined wafer.

7. The method of claim 1, wherein the inlet and outlet form a rectangular pattern on the silicon wafer and form a hole in the shape of a quadrangular pyramid by anisotropic etching.

8. The method of claim 7, wherein an angle between a lateral face of the inlet and a surface of the silicon wafer ranges from approximately 50 degrees to approximately 60 degrees.

9. The method of claim 1, wherein the silicon wafer and the glass wafer are made of a material having a similar coefficient of thermal expansion.

10. A mirror package comprising a mirror for reflecting a laser entering from an outside toward an external screen according to an image signal, the mirror package comprising:

a mirror wafer having a plurality of mirrors;

a glass wafer combined with an upper portion of the mirror wafer so as to seal the mirror wafer; and

a silicon wafer comprising, an inlet which allows the laser to enter and an outlet which allows the laser to be reflected from the mirror by an anisotropic etching, the silicon wafer being placed on an upper portion of the glass wafer so that the glass wafer combines with a surface of the silicon wafer where the inlet and the outlet are substantially formed,

wherein a combined wafer formed by combining the mirror wafer, the glass wafer and the silicon wafer is diced so that the inlet, the outlet and the mirror are each included in the combined wafer.

11. The mirror package of claim 10, wherein a plurality of silicon wafers are formed so that the inlet and the outlet formed on each silicon wafer of the plurality of silicon wafers overlap each other.

12. The mirror package of claim 11, wherein the size of the inlet and the outlet formed on each of the plurality of silicon wafers decreases as a distance from the glass wafer increases.

13. The mirror package of claim 11, wherein each of the plurality of silicon wafers respectively forms the inlet and the outlet by a dry etching, and is combined with the glass wafer, so that the size of the inlet and outlet decrease as a distance from the glass wafer increases.

14. The mirror package of claim 10, wherein the inlet and the outlet are formed by a wet etching.

15. The mirror package of claim 13, wherein an angle between a lateral face of the inlet and a surface of the silicon wafer ranges from about 50 degrees to about 60 degree.