STRAINED Si ON MULTIPLE MATERIALS FOR BULK OR SOI SUBSTRATES
First Claim
1. A method of forming a semiconducting substrate comprising:
- providing a Si-containing substrate;
forming a first pad stack atop a first portion of said Si-containing substrate, said first pad stack comprising a compressive layer positioned atop said first portion of said Si-containing substrate, a first semiconducting layer atop said compressive layer and a first etch barrier atop said first semiconducting layer;
forming a second pad stack atop a second portion of said Si-containing substrate, said second pad stack comprising a tensile layer positioned atop said second portion of said Si-containing substrate, a second semiconducting layer atop said tensile layer, and a second etch barrier atop said second semiconducting layer;
etching said Si-containing substrate selective to said first etch barrier and said second etch barrier, wherein said compressive layer elastically transfer a tensile strain to said first semiconducting layer and said tensile layer elastically transfers a compressive strain to said second semiconducting layer;
removing said first etch barrier and said second etch barrier; and
forming an isolation region between said first pad stack and said second pad stack.
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Abstract
The present invention provides a strained-Si structure, in which the nFET regions of the structure are strained in tension and the pFET regions of the structure are strained in compression. Broadly the strained-Si structure comprises a substrate, a first layered stack atop the substrate, the first layered stack comprising a first Si-containing portion of the substrates a compressive layer atop the Si-containing portion of the substrate, and a semiconducting silicon layer atop the compressive layer; and a second layered stack atop the substrate, the second layered stack comprising a second-silicon containing layer portion of the substrate, a tensile layer atop the second Si-containing portion of the substrate, and a second semiconducting silicon-layer atop the tensile layer.
102 Citations
10 Claims
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1. A method of forming a semiconducting substrate comprising:
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providing a Si-containing substrate;
forming a first pad stack atop a first portion of said Si-containing substrate, said first pad stack comprising a compressive layer positioned atop said first portion of said Si-containing substrate, a first semiconducting layer atop said compressive layer and a first etch barrier atop said first semiconducting layer;
forming a second pad stack atop a second portion of said Si-containing substrate, said second pad stack comprising a tensile layer positioned atop said second portion of said Si-containing substrate, a second semiconducting layer atop said tensile layer, and a second etch barrier atop said second semiconducting layer;
etching said Si-containing substrate selective to said first etch barrier and said second etch barrier, wherein said compressive layer elastically transfer a tensile strain to said first semiconducting layer and said tensile layer elastically transfers a compressive strain to said second semiconducting layer;
removing said first etch barrier and said second etch barrier; and
forming an isolation region between said first pad stack and said second pad stack. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification