Transistor gate forming methods and transistor structures
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0 Petitions
Accused Products
Abstract
A transistor gate forming method includes forming a metal layer within a line opening and forming a fill layer within the opening over the metal layer. The fill layer is substantially selectively etchable with respect to the metal layer. A transistor structure includes a line opening, a dielectric layer within the opening, a metal layer over the dielectric layer within the opening, and a fill layer over the metal layer within the opening. The metal layer/fill layer combination exhibits less intrinsic less than would otherwise exist if the fill layer were replaced by an increased thickness of the metal layer. The inventions apply at least to 3-D transistor structures.
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Citations
54 Claims
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1-38. -38. (canceled)
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39. A transistor structure comprising:
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a gate line opening extending into a semiconductive substrate, the opening having a semiconductive bottom and semiconductive side walls;
a gate dielectric layer within the opening over the semiconductive side walls and semiconductive bottom, the dielectric layer having an insulative bottom and insulative side walls;
a gate metal layer within the opening over the insulative bottom and insulative side walls, the metal layer having a conductive bottom and conductive side walls;
a gate fill layer within the opening over the conductive bottom and conductive side walls, the metal layer/fill layer combination exhibiting less intrinsic stress than would otherwise exist if the fill layer were replaced by an increased thickness of the metal layer. - View Dependent Claims (40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51)
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52. A transistor structure comprising:
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a gate line opening extending into a semiconductive substrate, the opening having a semiconductive bottom and semiconductive side walls;
a gate dielectric layer within the opening over the semiconductive side walls and semiconductive bottom, the dielectric layer having an insulative bottom and insulative side walls;
a gate metal layer containing titanium nitride within the opening over the insulative bottom and insulative side walls, the metal layer having a conductive bottom and conductive side walls;
a gate fill layer containing polysilicon filling all of the opening over the conductive bottom and conductive side walls, a thickness of the fill layer within the opening being greater than a thickness of the metal layer, the fill layer exhibiting the property of being substantially selectively etchable with respect to the metal layer, the metal layer exhibiting the property of being substantially selectively etchable with respect to the fill layer, the fill layer exhibiting a porosity greater than a porosity of the metal layer, the metal layer/fill layer combination exhibiting less intrinsic stress than would otherwise exist if the fill layer were replaced by an increased thickness of the metal layer. - View Dependent Claims (53, 54)
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Specification