Germanium on glass and glass-ceramic structures

• US 20070166947A1
• Filed: 05/01/2006
• Published: 07/19/2007
• Est. Priority Date: 12/31/2005
• Status: Active Grant

• Current Assignee: Corning Incorporated
• Original Assignee: Corning Incorporated
• Inventors: Gadkaree, Kishor, Lapp, Josef, Dejneka, Matthew, Danielson, Paul, Pinckney, Linda
• Granted Patent: US 7,456,057 B2
• Time in Patent Office: Days
• US Class Current: 438/404
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78684 having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys H01L29/7869 takes precedence

Abstract

A semiconductor-on-insulator structure including first and second layers which are attached to one another either directly or through one or more intermediate layers. The first layer includes a substantially single crystal germanium semiconductor material while the second layer comprises a glass or a glass-ceramic material having a linear coefficient thermal of expansion (25-300° C.) which is within the range of +/−20×10⁻⁷/° C. of the linear coefficient thermal of expansion of the germanium first layer.

Claims

1. A semiconductor-on-insulator structure comprising first and second layers which are attached to one another either directly or through one or more intermediate layers, wherein

the first layer comprises a substantially single crystal semiconductor material comprising germanium;

the second layer comprises a glass or a glass-ceramic having a linear coefficient thermal of expansion (25-300°

C.) which is within the range of +/−

20×

10<sup>−

7</sup>/°

C. of the linear coefficient thermal of expansion of the germanium first layer.

2. The semiconductor-on-insulator structure of claim 1, wherein the glass or glass-ceramic has a linear coefficient thermal of expansion (25-300°

C.) ranging between 50-70×

10<sup>−

7</sup>/°

C.

3. The semiconductor-on-insulator structure of claim 1, wherein the glass or glass-ceramic has a linear coefficient thermal of expansion (25-300°

C.) of 61×

10<sup>−

7</sup>/°

C.

4. The semiconductor-on-insulator structure of claim 1, wherein the glass or glass-ceramic has a strain point of equal to or greater than 650°

C.

5. The semiconductor-on-insulator structure of claim 1, wherein the glass or glass-ceramic has a strain point of equal to or greater than 700°

C.

6. The semiconductor-on-insulator structure of claim 1, wherein the glass has a composition comprising, calculated in weight percent and calculated from the batch on an oxide basis, of:

15-45% SiO₂, 7.5-15% Al₂O₃, 15-45% MgO+CaO+SrO+BaO and up to 55% RE₂O₃, RE being selected from the rare earth element group consisting Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu and mixtures thereof.

7. The semiconductor-on-insulator structure of claim 1, wherein the glass has a composition comprising, calculated in weight percent and calculated from the batch on an oxide basis, of 45-70% SiO₂, 2.5-30% Al₂O₃, 0-8% B₂O₃, 2.5-30% MgO+CaO+SrO+BaO and 1-20% La₂O₃+Y₂O₃.

8. The semiconductor-on-insulator structure of claim 1, wherein the glass has a composition comprising, calculated in weight percent and calculated from the batch on an oxide basis, of:

55-65% SiO₂, 10-20% Al₂O₃, and 15-30% MgO+CaO+SrO+BaO.

9. The semiconductor-on-insulator structure of claim 1, wherein the glass-ceramic has a composition comprising, calculated in weight percent and calculated from the batch on oxide basis, of:

30-55% SiO₂, 18-28% Al₂O₃, 8-20% ZnO, 0-6% ZnO, 0-6% MgO, 0-3% CaO, 0-3% SrO, 0-3% BaO, 0-3% K₂O, 0-15% Rb₂O+Cs₂O, 0-10% TiO₂ and 0-10% ZrO₂.

10. The semiconductor-on-insulator structure of claim 1, wherein the glass or glass-ceramic is essentially free of alkali ions.

11. The semiconductor-on-insulator structure of claim 1, wherein the bond strength between the first and second layers is at least 8 J/m².

12. The semiconductor-on-insulator structure of claim 1, wherein at least part of the structure comprises, in order:

the germanium semiconductor material;

the germanium semiconductor material with an enhanced oxygen content;

the glass or glass ceramic material with a reduced positive ion concentration for at least one type of positive ion;

the glass or glass ceramic material with an enhanced positive ion concentration for at least one type of positive ion; and

the glass or glass ceramic.

13. The semiconductor-on-insulator structure of claim 1, wherein the first layer has a thickness of no greater than about 1 μ

m.