DEPOSITION FROM LIQUID SOURCES

• US 20070166966A1
• Filed: 03/29/2007
• Published: 07/19/2007
• Est. Priority Date: 09/03/2004
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM America Incorporated (ASM International NV)
• Inventors: Todd, Michael, Raaijmakers, Ivo
• Granted Patent: US 7,674,728 B2
• Time in Patent Office: Days
• US Class Current: 438/497
• CPC Class Codes: C23C 16/4481 by evaporation using carrier gas in contact with the source material C23C16/4486 takes precedence
• CPC Class Codes: C23C 16/4483 using a porous body
• CPC Class Codes: C23C 16/4486 by producing an aerosol and subsequent evaporation of the droplets or particles
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02529 Silicon carbide
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02535 including tin
• CPC Class Codes: H01L 21/02573 Conductivity type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring

Abstract

A liquid injector is used to vaporize and inject a silicon precursor into a process chamber to form silicon-containing layers during a semiconductor fabrication process. The injector is connected to a source of silicon precursor, which preferably comprises liquid trisilane in a mixture with one or more dopant precursors. The mixture is metered as a liquid and delivered to the injector, where it is then vaporized and injected into the process chamber.

Claims

1. A method for semiconductor processing, comprising:

exposing a liquid silicon precursor to a hot ambient to convert the liquid silicon precursor into a precursor gas, the liquid silicon precursor comprising trisilane; and

flowing the precursor gas through a process chamber to deposit a silicon-containing film on a semiconductor substrate in the process chamber,

wherein a temperature of the hot ambient is greater than a boiling point of trisilane under processing conditions at a location where converting a liquid silicon precursor occurs.

2. The method of claim 1, wherein the process chamber is a single substrate process chamber.

3. The method of claim 1, wherein the liquid silicon precursor comprises a dopant.

4. The method of claim 3, wherein the dopant has a boiling point within about 60°

C. of a boiling point of the liquid silicon precursor under process conditions.

5. The method of claim 4, wherein the dopant has a boiling point within about 40°

C. of a boiling point of the liquid silicon precursor under process conditions

6. The method of claim 1, wherein the liquid silicon precursor is converted into the precursor gas before entry of the liquid silicon precursor into the process chamber.

7. The method of claim 6, wherein converting the liquid silicon precursor into the precursor gas comprises flowing liquid silicon precursor through a liquid injector, wherein the hot ambient is a surface of the liquid injector.

8. The method of claim 7, further comprising flowing a gaseous precursor through the liquid injector and into the process chamber.

9. The method of claim 6, wherein converting the liquid silicon precursor into the precursor gas comprises flowing liquid silicon precursor through a liquid injector, wherein the hot ambient is a porous matrix for receiving the liquid silicon precursor in the liquid injector.

10. The method of claim 1, wherein converting the liquid silicon precursor into the process gas comprises atomizing the liquid silicon precursor.

11. The method of claim 10, wherein converting the liquid silicon precursor into the precursor gas further comprises flowing the atomized liquid silicon precursor into the process chamber, wherein the hot ambient is an atmosphere of the process chamber.

12. The method of claim 10, wherein converting the liquid silicon precursor into the precursor gas further comprises exposing the atomized liquid silicon precursor to a pre-heated carrier gas, wherein the pre-heated carrier gas is the hot ambient.

13. A method for semiconductor fabrication, comprising:

metering a precursor liquid comprising trisilane;

vaporizing the precursor liquid after metering; and

injecting the vaporized precursor liquid into the process chamber to deposit a silicon-containing film on a semiconductor substrate in the process chamber.

14. The method of claim 13, wherein the precursor liquid comprises a plurality of precursors, including trisilane.

15. The method of claim 14, wherein the silicon-containing film is formed of a silicon compound, wherein the silicon compound is SiGe, SiGeC, SiN, SiC or SiSnC.

16. The method of claim 13, wherein trisilane is an only precursor compound in the precursor liquid.

17. The method of claim 13, wherein depositing the silicon-containing film on the semiconductor substrate comprises performing chemical vapor deposition.

18. The method of claim 17, wherein depositing the silicon-containing film on the semiconductor substrate comprises performing plasma enhanced chemical vapor deposition.

19. The method of claim 13, wherein the process chamber is a single substrate process chamber.

20. The method of claim 19, wherein the single substrate process chamber is a laminar flow process chamber.