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DEPOSITION FROM LIQUID SOURCES

  • US 20070166966A1
  • Filed: 03/29/2007
  • Published: 07/19/2007
  • Est. Priority Date: 09/03/2004
  • Status: Active Grant
First Claim
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1. A method for semiconductor processing, comprising:

  • exposing a liquid silicon precursor to a hot ambient to convert the liquid silicon precursor into a precursor gas, the liquid silicon precursor comprising trisilane; and

    flowing the precursor gas through a process chamber to deposit a silicon-containing film on a semiconductor substrate in the process chamber, wherein a temperature of the hot ambient is greater than a boiling point of trisilane under processing conditions at a location where converting a liquid silicon precursor occurs.

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