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Systems and methods of forming refractory metal nitride layers using disilazanes

  • US 20070166999A1
  • Filed: 02/28/2007
  • Published: 07/19/2007
  • Est. Priority Date: 08/28/2002
  • Status: Active Grant
First Claim
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1. A vapor deposition method comprising:

  • providing a vapor comprising one or more refractory metal precursor compounds of the formula MYn, (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M;

    providing a vapor comprising one or more disilazanes of the formula (R)xH3-xSiNHSi(R)xH3-x, wherein each R is independently an organic group, and x is 1 to 3; and

    contacting the vapors comprising the one or more refractory metal precursor compounds and the one or more disilazanes with a substrate to form a refractory metal nitride layer on one or more surfaces of the substrate.

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