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Semiconductor device and manufacturing method thereof

  • US 20070170499A1
  • Filed: 01/22/2007
  • Published: 07/26/2007
  • Est. Priority Date: 01/23/2006
  • Status: Abandoned Application
First Claim
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1. A semiconductor device having a source and a drain, said device comprising:

  • first and second regions as said source and said drain, respectively; and

    a gate electrode formed to have a buried gate structure, a portion of said gate electrode being put between said first and second regions,wherein a width of said gate electrode is wider than a gate width of said first and second regions.

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