Three-Dimensional Memory Cells
First Claim
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1. A polarized 3D-ROM (three-dimensional read-only memory) cell in a three-dimensional memory (3D-M), comprising:
- first and second conductive layers; and
at least a portion of 3D-ROM layer between said first and second conductive layers, said portion of 3D-ROM layer comprising a polarized quasi-conductive layer, said polarized quasi-conductive layer having a lower resistance when the current flows in one direction than when the current flows in the opposite direction;
wherein said polarized quasi-conductive layer comprises first and second sub-layers of different base materials, or has different interfaces with said first and second conductive layers.
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Abstract
The present invention discloses a three-dimensional memory (3D-M) with polarized 3D-ROM (three-dimensional read-only memory) cells. Polarized 3D-ROM can ensure a larger unit array and therefore, a better integratibility. The present invention further discloses a 3D-M with seamless 3D-ROM cells. Seamless 3D-ROM can ensure a better manufacturing yield.
21 Citations
20 Claims
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1. A polarized 3D-ROM (three-dimensional read-only memory) cell in a three-dimensional memory (3D-M), comprising:
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first and second conductive layers; and
at least a portion of 3D-ROM layer between said first and second conductive layers, said portion of 3D-ROM layer comprising a polarized quasi-conductive layer, said polarized quasi-conductive layer having a lower resistance when the current flows in one direction than when the current flows in the opposite direction;
wherein said polarized quasi-conductive layer comprises first and second sub-layers of different base materials, or has different interfaces with said first and second conductive layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A seamless 3D-ROM (three-dimensional read-only memory) cell in a three-dimensional memory (3D-M), comprising:
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first and second conductive layers; and
at least a portion of 3D-ROM layer between said first and second conductive layers, said portion of 3D-ROM layer comprising at least a quasi-conductive layer or an antifuse layer, said quasi-conductive layer having a lower resistance when the current flows in one direction than when the current flows in the opposite direction, said antifuse layer having a higher resistance before programming than after programming;
wherein said portion of 3D-ROM layer has a first interface with said first conductive layer and a second interface with said second conductive layer, neither of said first and second interfaces being exposed to any substantial material-removal processing step during manufacturing. - View Dependent Claims (13, 14, 15)
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16. A 3D-ROM (three-dimensional read-only memory) cell in a three-dimensional memory (3D-M), comprising:
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first and second electrodes; and
a 3D-ROM layer between said first and second electrodes and comprising a large-bandgap semiconductor material, wherein the bandgap of said large-bandgap semiconductor material is larger than silicon;
whereby said 3D-ROM supports high-temperature operation. - View Dependent Claims (17)
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18. A three-dimensional memory (3D-M), comprising:
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a substrate with transistors thereon;
a plurality of memory levels stacked on top of said substrate and connected with said substrate with a plurality of inter-level connecting vias, said memory level further comprising a plurality of address-selection lines;
wherein at least a selected one of said address-selection lines uses semiconductor material as base material and does not comprise a sub-layer whose base material is a metallic material. - View Dependent Claims (19, 20)
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Specification