×

THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

  • US 20070170526A1
  • Filed: 01/19/2007
  • Published: 07/26/2007
  • Est. Priority Date: 01/23/2006
  • Status: Active Grant
First Claim
Patent Images

1. A thin-film transistor comprising:

  • a non-single-crystal semiconductor thin film formed on an insulating substrate;

    a gate insulating film formed on the non-single-crystal semiconductor thin film;

    a gate electrode formed on the gate insulating film and including a lower gate electrode and an upper gate electrode; and

    a Lightly Doped Drain structure including a heavily doped region and a lightly doped region formed in the non-single-crystal semiconductor thin film;

    wherein a difference in impurity concentration between the lightly doped region and the heavily doped region is equivalent to a concentration of an impurity blocked by the lower gate electrode from being introduced; and

    the gate electrode does not exist over the lightly doped region.

View all claims
  • 3 Assignments
Timeline View
Assignment View
    ×
    ×