Silicon-rich silicon nitrides as etch stops in MEMS manufature
First Claim
Patent Images
1. An unreleased MEMS device, comprising:
- a silicon nitride layer positioned between a sacrificial layer and an electrode layer, wherein the electrode layer is adapted to be movable upon removal of the sacrificial layer and the ratio of silicon to nitrogen in the silicon nitride layer is greater than 3;
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Accused Products
Abstract
The fabrication of a MEMS device such as an interferometric modulator is improved by employing an etch stop layer between a sacrificial layer and a an electrode. The etch stop may reduce undesirable over-etching of the sacrificial layer and the electrode. The etch stop layer may also serve as a barrier layer, buffer layer, and or template layer. The etch stop layer may include silicon-rich silicon nitride.
135 Citations
48 Claims
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1. An unreleased MEMS device, comprising:
a silicon nitride layer positioned between a sacrificial layer and an electrode layer, wherein the electrode layer is adapted to be movable upon removal of the sacrificial layer and the ratio of silicon to nitrogen in the silicon nitride layer is greater than 3;
4.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. An unreleased interferometric modulator, comprising:
an etch stop layer positioned between a sacrificial layer and a metal mirror layer, wherein the metal mirror layer is adapted to be movable upon removal of the sacrificial layer and the etch stop layer is adapted to be substantially completely removed upon exposure to XeF2 for less than about 10 minutes. - View Dependent Claims (15, 16, 17, 18)
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19. An unreleased MEMS device, comprising:
a silicon nitride layer positioned between a sacrificial layer and an electrode layer, wherein the electrode layer is adapted to be movable upon removal of the sacrificial layer, the silicon nitride layer is adapted to be substantially completely removed upon exposure to a first etchant that is adapted to substantially completely remove the sacrificial layer, and the silicon nitride layer is adapted to be substantially resistant to a second etchant that is adapted to substantially completely remove the electrode layer. - View Dependent Claims (20, 21, 22, 23, 24)
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25. An unreleased interferometric modulator, comprising:
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means for reflecting light;
means for supporting the reflecting means during interferometric modulator manufacture; and
means for protecting the supporting means during etching of the reflecting means. - View Dependent Claims (26, 27, 28, 29)
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30. A method of manufacturing a MEMS device, comprising:
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forming a sacrificial layer;
forming an electrode layer, wherein the electrode layer is adapted to be movable upon removal of the sacrificial layer;
forming a silicon nitride layer between the sacrificial layer and the electrode layer, wherein the ratio of silicon to nitrogen in the silicon nitride layer is greater than about 3;
4;
patterning the electrode layer; and
removing the sacrificial layer. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41)
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42. A method of manufacturing a MEMS device, comprising:
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forming a sacrificial layer;
forming an electrode layer, wherein the electrode layer is adapted to be movable upon removal of the sacrificial layer;
forming an etch stop layer between the sacrificial layer and the electrode layer;
patterning the electrode layer; and
removing the sacrificial layer and etch stop layer with a same etchant. - View Dependent Claims (43, 44, 45, 46, 47, 48)
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Specification