Semiconductor device having flange structure
First Claim
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1. A semiconductor device comprising:
- a semiconductor element;
a layer of material provided on the semiconductor element having an opening through which a first bond pad is exposed; and
at least one flange structure provided on the first bond pad, the at least one flange structure made of at least two metal layers with different etch rates.
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Abstract
A semiconductor device may include a semiconductor element. A layer of material may be provided on the semiconductor element which may have an opening through which a bond pad may be exposed. At least one flange structure may be provided on the first bond pad, the at least one flange structure made of at least two metal layers with different etch rates.
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Citations
22 Claims
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1. A semiconductor device comprising:
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a semiconductor element; a layer of material provided on the semiconductor element having an opening through which a first bond pad is exposed; and at least one flange structure provided on the first bond pad, the at least one flange structure made of at least two metal layers with different etch rates. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification