Thin film emitter-absorber apparatus and methods

• US 20070171120A1
• Filed: 12/12/2006
• Published: 07/26/2007
• Est. Priority Date: 12/12/2005
• Status: Active Grant

• Current Assignee: Flir Surveillance, Inc. (Teledyne Technologies Incorporated)
• Original Assignee: Ion Optics, Inc. (Teledyne Technologies Incorporated)
• Inventors: Johnson, Edward, Puscasu, Irina
• Granted Patent: US 7,973,696 B2
• Time in Patent Office: Days
• US Class Current: 342/53
• CPC Class Codes: G01J 3/108 for measurement in the infrared range
• CPC Class Codes: G01N 21/3504 for analysing gases, e.g. multi-gas analysis
• CPC Class Codes: G02F 1/21 by interference
• CPC Class Codes: G02F 2201/083 infrared absorbing
• CPC Class Codes: G02F 2201/307 Reflective grating, i.e. Bragg grating
• CPC Class Codes: G02F 2202/10 semiconductor
• CPC Class Codes: G02F 2202/30 Metamaterials
• CPC Class Codes: G02F 2203/055 wavelength filtering
• CPC Class Codes: G02F 2203/10 plasmon
• CPC Class Codes: G02F 2203/11 involving infrared radiation
• CPC Class Codes: G02F 2203/15 involving resonance effects, e.g. resonantly enhanced interaction
• CPC Class Codes: G02F 2203/48 Variable attenuator
• CPC Class Codes: H01Q 15/006 Selective devices having photonic band gap materials or materials of which the material properties are frequency dependent, e.g. perforated substrates, high-impedance surfaces
• CPC Class Codes: H01Q 15/0066 said selective devices being reconfigurable, tunable or controllable, e.g. using switches

Abstract

Methods and apparatus for providing a tunable absorption-emission band in a wavelength selective device are disclosed. A device for selectively absorbing incident electromagnetic radiation includes an electrically conductive surface layer including an arrangement of multiple surface elements. The surface layer is disposed at a nonzero height above a continuous electrically conductive layer. An electrically isolating intermediate layer defines a first surface that is in communication with the electrically conductive surface layer. The continuous electrically conductive backing layer is provided in communication with a second surface of the electrically isolating intermediate layer. When combined with an infrared source, the wavelength selective device emits infrared radiation in at least one narrow band determined by a resonance of the device. In some embodiments, the device includes a control feature that allows the resonance to be selectively modified. The device has broad applications including gas detection devices and infrared imaging.

Claims

1. A tunable device for selectively coupling electromagnetic radiation comprising:

a first electrically conductive layer including a plurality of discrete surface elements;

an electrically insulating intermediate layer defining a first surface in communication with the electrically conductive surface layer;

a second, continuous electrically conductive layer in communication with a second surface of the electrically insulating intermediate layer; and

a terminal in electrical communication with at least one of the first electrically conductive layer, the electrically insulating intermediate layer, and the second continuous, electrically conductive layer, the plurality of discrete surface elements resonantly coupling at least a portion of the electromagnetic radiation with respect to the continuous electrically conductive layer.

2. The device of claim 1, wherein the plurality of discrete surface elements comprises an array of uniform-sized electrically conductive elements.

3. The device of claim 2, wherein the uniformly shaped elements are selected from the group consisting of:

closed curves;

ellipses;

circles;

rectangles;

squares;

polygons;

triangles;

hexagons;

parallelograms;

stars having at least three legs;

annular structures; and

combinations thereof.

4. The device of claim 1, wherein the plurality of discrete surface elements are arranged in an array.

5. The device of claim 4, wherein the array is selected from the group consisting of:

rectangular grids;

square grids;

triangular grids;

Archimedean grids; and

random arrangements.

6. The device of claim 1, wherein at least one of the first and second electrically conductive layers is formed from a metal.

7. The device of claim 1, wherein the electrically insulating intermediate layer comprises a dielectric material.

8. The device of claim 1, wherein at least one of the first electrically conductive layer, the electrically insulating intermediate layer, and the second continuous electrically conductive layer comprises a semiconductor.

9. The device of claim 1, wherein the plurality of discrete surface elements of the first electrically conductive layer comprises a plurality of through holes defined in an electrically conductive surface layer.

10. The device of claim 9, wherein the plurality of discrete through holes comprises an array of uniform-sized elements.

11. The device of claim 1, wherein the second, continuous electrically conductive layer comprises an electrically activated thermal source in communication with the terminal, the terminal receiving an electrical input to activate the thermal source.

12. The device of claim 1, wherein the second, continuous electrically conductive layer comprises a thermistor in thermal communication with the plurality of discrete surface elements and in communication with the terminal, the terminal enabling remote monitoring of the thermistor.

13. The device of claim 1, wherein two or more of the first electrically conductive layer, the electrically insulating intermediate layer, and the second continuous, electrically conductive layer are configured to provide a controllable switch, the terminal receiving an electrical input for controlling the switch.

14. A tunable infrared emitter comprising:

a first electrically conductive layer including a plurality of discrete surface elements;

an electrically insulating intermediate layer defining a first surface in communication with the electrically conductive surface layer;

a second, continuous electrically conductive layer in communication with a second surface of the electrically insulating intermediate layer; and

an infrared source in thermal communication with at least one of the first electrically conductive layer, the electrically insulating layer and the second, continuous electrically conductive layer, the infrared source generating broadband infrared radiation, the plurality of discrete surface elements electromagnetically coupling at least a portion of the broadband infrared radiation, the coupling producing a tuned, narrowband infrared emission.

15. The device of claim 14, wherein tuned, narrowband infrared emission has a selectivity of not more than about 0.1, determined at a full-width-half-maximum spectral width.

16. The device of claim 14, wherein the infrared source comprises an electrical filament.

17. The device of claim 16, wherein the electrical filament includes the second, continuous electrically conductive layer.

18. The device of claim 14, wherein a total thickness of the first electrically conductive layer, the electrically insulating layer and the second, continuous electrically conductive layer is not more than about 10 μ

m.

19. The device of claim 18, wherein the device is suspended above a surface.

20. The device of claim 14, further comprising a thermistor in thermal communication with the plurality of discrete surface elements, the device selectively emitting infrared radiation in a tuned band determined by the electromagnetic coupling of the plurality of discrete surface elements.

21. A controllable wavelength selective device, comprising:

a first electrically conductive layer including a plurality of discrete surface elements;

an electrically insulating intermediate layer defining a first surface in communication with the electrically conductive surface layer;

a second, continuous electrically conductive layer in communication with a second surface of the electrically insulating intermediate layer, wherein at least one of the first electrically conductive layer;

the electrically insulating intermediate layer; and

the second, continuous electrically conductive layer comprises an externally controllable electrical conductivity.

22. The device of claim 21, wherein at least one of the first electrically conductive layer and the second, continuous electrically conductive layer comprises an electrical conductivity controllable between conducting and non-conducting, the controlled conductivity usable to control resonant performance of the device.

23. The device of claim 22, wherein at least one of the first electrically conductive layer and the second, continuous electrically conductive layer comprises a semiconductor material having a controllable electrical conductivity responsive to an electrical input.

24. The device of claim 22, wherein at least one of the first electrically conductive layer and the second, continuous electrically conductive layer comprises a pyroelectric material having a controllable electrical conductivity responsive to a thermal input.

25. The device of claim 21, wherein the electrically insulating intermediate layer comprises an electrical conductivity controllable between insulating and non-insulating, the controlled conductivity usable to control resonant performance of the device.

26. The device of claim 25, wherein the electrically insulating intermediate layer comprises a semiconductor material having a controllable electrical conductivity responsive to an electrical input.

27. The device of claim 25, wherein the electrically insulating intermediate layer comprises a pyroelectric material having a controllable electrical conductivity responsive to a thermal input.

28. The device of claim 25, wherein the electrically insulating intermediate layer comprises an optically responsive material having a controllable electrical conductivity responsive to an optical input.

29. The device of claim 25, wherein the electrically insulating intermediate layer comprises a chemically responsive material having a controllable electrical conductivity responsive to a change in a local chemical environment.

30. A method of manufacturing a wavelength selective device comprising:

forming a continuous, electrically thin conductive ground layer on a substrate;

applying an electrically thin insulating layer to a top surface of the ground layer;

forming a electrically thin outer conductive layer on the electrically thin insulating layer, the electrically thin outer conductive layer including a plurality of discrete surface elements.

31. The method of claim 30, wherein at least one of the layers is deposited using a thin film deposition technique.

32. The method of claim 30, wherein the discrete surface elements are formed using at least one of:

laser ablation, removing selected regions of the conductive material from the surface;

nano-imprinting;

stamping; and

standard semiconductor fabrication techniques.

33. The method of claim 30, wherein the substrate is flexible.

34. The method of claim 30, further comprising removing a sacrificial layer between a bottom surface of the ground layer and a substrate, removal of the sacrificial layer releasing a multi-layered thin-film device.

35. The method of claim 34, wherein the thickness of the multi-layered thin-film device is not more than about 10 μ

m.