Semiconductor device with electrically broken fuse and its manufacture method
First Claim
1. A semiconductor device comprising:
- a first electric fuse formed over a semiconductor substrate, the first electric fuse being broken when a current floes therethrough;
a first breaker transistor including a source region, a drain region and a gate electrode, the source region and the drain region being disposed in a first surface layer of the semiconductor substrate of a first conductivity type and sandwiching a channel region, the gate electrode controlling a conduction state between the source and drain regions, the drain region being connected to one end of the first electric fuse;
a breaker pad connected to another end of the first electric fuse for supplying a fusing current to the first electric fuse;
a back-bias pad capable of applying a fixed voltage to the first surface layer independently from both a power supply voltage and a ground potential; and
a first fuse information read circuit for reading a breakdown/non-breakdown state of the first electric fuse.
4 Assignments
0 Petitions
Accused Products
Abstract
An electric fuse is formed over a semiconductor substrate, the electric fuse being broken when a current flows therethrough. A breaker transistor is formed in a first surface layer of the semiconductor substrate of a first conductivity type, the breaker transistor including a source region, a drain region and a gate electrode. The source and drain regions sandwiches a channel region. The gate electrode controls a conduction state between the source and drain regions. The drain region is connected to one end of the electric fuse. A breaker pad is connected to the end of the electric fuse to supply a fusing current to the electric fuse. A back-bias pad applies a fixed voltage to the first surface layer independently from both a power supply voltage and a ground potential. A fuse information read circuit reads a breakdown/non-breakdown state of the electric fuse.
10 Citations
10 Claims
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1. A semiconductor device comprising:
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a first electric fuse formed over a semiconductor substrate, the first electric fuse being broken when a current floes therethrough; a first breaker transistor including a source region, a drain region and a gate electrode, the source region and the drain region being disposed in a first surface layer of the semiconductor substrate of a first conductivity type and sandwiching a channel region, the gate electrode controlling a conduction state between the source and drain regions, the drain region being connected to one end of the first electric fuse; a breaker pad connected to another end of the first electric fuse for supplying a fusing current to the first electric fuse; a back-bias pad capable of applying a fixed voltage to the first surface layer independently from both a power supply voltage and a ground potential; and a first fuse information read circuit for reading a breakdown/non-breakdown state of the first electric fuse. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising:
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a first RAM macro disposed over a semiconductor substrate and having a redundancy structure; a first redundancy information memory circuit for supplying redundancy retrieval information to the first RAM macro; a breaker pad; and a back-bias pad, wherein; the first redundancy information memory circuit includes a plurality of fuse blocks, each of the fuse blocks comprising; an electric fuse formed over the semiconductor substrate, the electric fuse being broken when a current flows therethrough; a breaker transistor disposed in a first surface layer of the semiconductor substrate of a first conductivity type for each electric fuse, the breaker transistor including a source region, a drain region and a gate electrode, the source region and the drain region sandwiching a channel region, the gate electrode controlling a conduction state between the source and drain regions, the drain region being connected to one end of the corresponding electric fuse; and a fuse information read circuit disposed for each electric fuse for reading a breakdown/non-breakdown state of the corresponding electric fuse; the breaker pad is connected to another end of the electric fuses for supplying a fusing current to the electric fuses; and the back-bias pad being capable of applying a fixed voltage to the first surface layer independently from a power supply voltage and a ground potential. - View Dependent Claims (7, 8)
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9. A manufacture method for a semiconductor device comprising:
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an electric fuse formed on a semiconductor substrate, the first electric fuse being broken when a current flows therethrough; and a breaker transistor including a source region, a drain region and a gate electrode, the source region and the drain region being disposed in a first surface layer of the semiconductor substrate of a first conductivity type and sandwiching a channel region, the gate electrode controlling a conduction state between the source and drain regions, the drain region being connected to one end of the electric fuse, and the manufacture method comprising a step of; applying a back-bias to the first surface layer so that a forward voltage is applied across a pn-junction between the first surface layer and the source region, applying a gate voltage to the gate electrode so that the breaker transistor turns on, and in this state, applying a fusing current to a serial circuit of the electric fuse and the breaker transistor to break the electric fuse. - View Dependent Claims (10)
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Specification