Fabrication method of semiconductor device

• US 20070173055A1
• Filed: 01/18/2007
• Published: 07/26/2007
• Est. Priority Date: 01/20/2006
• Status: Active Grant

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Sakai, Hisaya, Nakao, Yoshiyuki, Shimizu, Noriyoshi, Ohtsuka, Nobuyuki
• Granted Patent: US 7,935,624 B2
• Time in Patent Office: Days
• US Class Current: 438/627
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76844 Bottomless liners
• CPC Class Codes: H01L 21/76864 Thermal treatment
• CPC Class Codes: H01L 21/76867 characterized by methods of formation other than PVD, CVD or deposition from a liquids PVD H01L21/2855; CVD H01L21/28556; deposition from liquids H01L21/288
• CPC Class Codes: H01L 21/76873 for electroplating
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material

Abstract

A method for fabricating a semiconductor device includes the steps of forming an opening defined by an inner wall surface in an insulation film, forming a Cu—Mn alloy layer in the opening, depositing a Cu layer on the Cu—Mn alloy layer and filling the opening with the Cu layer, and forming a barrier layer as a result of reaction between Mn atoms in the Cu—Mn alloy layer and the insulation film, wherein the step of forming the barrier layer is conducted by exposing the Cu layer to an ambient that forms a gaseous reaction product when reacted with Mn.

Claims

1. A method for fabricating a semiconductor device, comprising the steps of:

forming an opening defined by an inner wall surface in an insulation film;

forming a Cu—

Mn alloy layer in said opening;

depositing a Cu layer on said Cu—

Mn alloy layer and filling said opening with said Cu layer; and

forming a barrier layer as a result of reaction between Mn atoms in said Cu—

Mn alloy layer and said insulation film,

wherein said step of forming said barrier layer is conducted by exposing said Cu layer to an ambient that reacts with Mn and forms a gaseous reaction product.

2. The method as claimed in claim 1, wherein said ambient oxidizes Mn.

3. The method as claimed in claim 2, wherein said ambient reacts with Mn oxide and forms a gaseous reaction product.

4. The method as claimed in claim 1, wherein said ambient contains any of a formic acid, a carbonic acid, hexafluoroacetylacetonato, H₂O, and CO₂.

5. The method as claimed in claim 1, wherein said exposing step is conducted at a temperature of 100°

C. or higher but not exceeding 400°

C.

6. The method as claimed in claim 1, wherein said exposing step is conducted under a process pressure of 1-1000 Pa.

7. A method for fabricating a semiconductor device, comprising the steps of:

forming an opening defined by an inner wall surface in an insulation film;

forming a Cu—

Mn alloy layer in said opening;

forming a barrier layer on said inner wall surface as a result of reaction of Mn atoms in said Cu—

Mn alloy layer and said insulation film; and

depositing a Cu layer on said Cu—

Mn alloy layer and filling said opening with said Cu layer,

wherein said Cu layer is exposed to an ambient that reacts with Mn and forms a gaseous reaction product.

8. The method as claimed in claim 7, wherein said ambient oxidizes Mn.

9. The method as claimed in claim 8, wherein said ambient reacts with Mn oxide and forms a gaseous reaction product.

10. The method as claimed in claim 7, wherein said ambient contains any of a formic acid, a carbonic acid, hexafluoroacetylacetonato, H₂O, and CO₂.

11. The method as claimed in claim 7, wherein said exposing step is conducted at a temperature of 100°

C. or higher but not exceeding 400°

C.

12. The method as claimed in claim 7, wherein said exposing step is conducted under a process pressure of 1-1000 Pa.

13. A method for fabricating a semiconductor device, comprising the steps of:

forming an opening defined by an inner wall surface in an insulation film;

forming a Cu—

Mn alloy layer in said opening;

forming a barrier layer on said inner wall surface as a result of reaction between Mn atoms in said Cu—

Mn alloy layer and said insulation film;

exposing said Cu—

Mn alloy layer to an ambient that reacts with Mn and forms a gaseous reaction product; and

depositing, after said step of exposing said Cu—

Mn alloy layer to said ambient, a Cu layer on said Cu—

Mn alloy layer and filing said opening with said Cu layer.

14. The method as claimed in claim 13, wherein said step of forming said barrier layer and said step of exposing said Cu—

Mn alloy layer to said ambient are conducted simultaneously.

15. The method as claimed in claim 13, wherein said step of exposing said Cu—

Mn alloy layer to said ambient is conducted after said step of forming said barrier layer.

16. The method as claimed in claim 13, wherein said ambient oxidizes Mn.

17. The method as claimed in claim 16, wherein said ambient reacts with Mn oxide and forms a gaseous reaction product.

18. The method as claimed in claim 13, wherein said ambient contains any of a formic acid, a carbonic acid, hexafluoroacetylacetonato, H₂O, and CO₂.

19. The method as claimed in any of claims claim 13, wherein said exposing step is conducted at a temperature of 100°

C. or higher but not exceeding 400°

C.

20. The method as claimed in claim 13, wherein said exposing step is conducted under a process pressure of 1-1000 Pa.