Fabrication method of semiconductor device
First Claim
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1. A method for fabricating a semiconductor device, comprising the steps of:
- forming an opening defined by an inner wall surface in an insulation film;
forming a Cu—
Mn alloy layer in said opening;
depositing a Cu layer on said Cu—
Mn alloy layer and filling said opening with said Cu layer; and
forming a barrier layer as a result of reaction between Mn atoms in said Cu—
Mn alloy layer and said insulation film, wherein said step of forming said barrier layer is conducted by exposing said Cu layer to an ambient that reacts with Mn and forms a gaseous reaction product.
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Abstract
A method for fabricating a semiconductor device includes the steps of forming an opening defined by an inner wall surface in an insulation film, forming a Cu—Mn alloy layer in the opening, depositing a Cu layer on the Cu—Mn alloy layer and filling the opening with the Cu layer, and forming a barrier layer as a result of reaction between Mn atoms in the Cu—Mn alloy layer and the insulation film, wherein the step of forming the barrier layer is conducted by exposing the Cu layer to an ambient that forms a gaseous reaction product when reacted with Mn.
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Citations
20 Claims
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1. A method for fabricating a semiconductor device, comprising the steps of:
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forming an opening defined by an inner wall surface in an insulation film;
forming a Cu—
Mn alloy layer in said opening;
depositing a Cu layer on said Cu—
Mn alloy layer and filling said opening with said Cu layer; and
forming a barrier layer as a result of reaction between Mn atoms in said Cu—
Mn alloy layer and said insulation film,wherein said step of forming said barrier layer is conducted by exposing said Cu layer to an ambient that reacts with Mn and forms a gaseous reaction product. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for fabricating a semiconductor device, comprising the steps of:
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forming an opening defined by an inner wall surface in an insulation film;
forming a Cu—
Mn alloy layer in said opening;
forming a barrier layer on said inner wall surface as a result of reaction of Mn atoms in said Cu—
Mn alloy layer and said insulation film; and
depositing a Cu layer on said Cu—
Mn alloy layer and filling said opening with said Cu layer,wherein said Cu layer is exposed to an ambient that reacts with Mn and forms a gaseous reaction product. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method for fabricating a semiconductor device, comprising the steps of:
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forming an opening defined by an inner wall surface in an insulation film;
forming a Cu—
Mn alloy layer in said opening;
forming a barrier layer on said inner wall surface as a result of reaction between Mn atoms in said Cu—
Mn alloy layer and said insulation film;
exposing said Cu—
Mn alloy layer to an ambient that reacts with Mn and forms a gaseous reaction product; and
depositing, after said step of exposing said Cu—
Mn alloy layer to said ambient, a Cu layer on said Cu—
Mn alloy layer and filing said opening with said Cu layer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification