SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM STORING PROGRAM FOR IMPLEMENTING THE METHOD

• US 20070175393A1
• Filed: 01/30/2007
• Published: 08/02/2007
• Est. Priority Date: 01/31/2006
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Kikuchi, Takamichi, NISHIMURA, Eiichi
• Application Number:
  US11/668,684
• Publication Number:
  US 20070175393A1
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01L 21/67017 Apparatus for fluid treatment H01L21/67126, H01L21/6715 take precedence
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/6719 characterized by the construction of the processing chambers, e.g. modular processing chambers
• CPC Class Codes: H01L 21/67196 characterized by the construction of the transfer chamber
• CPC Class Codes: H01L 21/67201 characterized by the construction of the load-lock chamber

Abstract

A substrate processing apparatus that enables an oxide layer and an organic layer to be removed efficiently. A substrate formed at its surface with an organic layer covered with the oxide layer is housed in a chemical reaction processing apparatus of the substrate processing apparatus, in which the oxide layer is subjected to chemical reaction with gas molecules, and thus a product is produced on the substrate surface. The substrate is heated in a chamber of a heat treatment apparatus of the substrate processing apparatus, whereby the product is vaporized and the organic layer is exposed. Microwaves are then introduced into the chamber into which oxygen gas is supplied, whereby there are produced oxygen radicals that decompose and remove the organic layer.

Claims

1. A substrate processing apparatus that carries out processing on a substrate having formed on a surface thereof an organic layer covered with an oxide layer, the substrate processing apparatus comprising:

a chemical reaction processing apparatus that subjects the oxide layer to chemical reaction with gas molecules so as to produce a product on the surface of the substrate; and

a heat treatment apparatus that heats the substrate on the surface of which the product has been produced;

wherein said heat treatment apparatus comprises a housing chamber in which the substrate is housed, an oxygen gas supply system that supplies oxygen gas into said housing chamber, and a microwave introducing apparatus that introduces microwaves into said housing chamber.

2. A substrate processing apparatus as claimed in claim 1, wherein said microwave introducing apparatus has a disk-shaped antenna disposed such as to face the substrate housed in said housing chamber, and an electromagnetic wave absorber disposed such as to surround a peripheral portion of said antenna.

3. A substrate processing apparatus as claimed in claim 1, wherein the organic layer is a layer made of CF-type deposit.

4. A substrate processing method for carrying out processing on a substrate having formed on a surface thereof an organic layer covered with an oxide layer, the substrate processing method comprising:

a chemical reaction processing step of subjecting the oxide layer to chemical reaction with gas molecules so as to produce a product on the surface of the substrate;

a heat treatment step of heating the substrate on the surface of which the product has been produced;

an oxygen gas supply step of supplying oxygen gas toward an upper portion of the substrate on which the heat treatment has been carried out; and

a microwave introducing step of introducing microwaves toward the upper portion of the substrate onto which the oxygen gas has been supplied.

5. A computer-readable storage medium storing a program for causing a computer to implement a substrate processing method for carrying out processing on a substrate having formed on a surface thereof an organic layer covered with an oxide layer, the program comprising:

a chemical reaction processing module for subjecting the oxide layer to chemical reaction with gas molecules so as to produce a product on the surface of the substrate;

a heat treatment module for heating the substrate on the surface of which the product has been produced;

an oxygen gas supply module for supplying oxygen gas toward an upper portion of the substrate on which the heat treatment has been carried out; and

a microwave introducing module for introducing microwaves toward the upper portion of the substrate onto which the oxygen gas has been supplied.