METHODS AND APPARATUS FOR IN-SITU SUBSTRATE PROCESSING
First Claim
1. A plasma processing system for processing a substrate, the plasma processing system comprising:
- a gas distribution system;
a gas flow control assembly coupled to the gas distribution system and configured to control a set of input gases provided by the gas distribution system, the set of input gases including at least one gas;
a first set of nozzles coupled to the gas flow control assembly and configured to supply a first set of gases for processing a first portion of the substrate; and
a second set of nozzles coupled to the gas flow control assembly and configured to supply a second set of gases for processing a second portion of the substrate, wherein the first set of gases represents a first portion of the set of input gases, the second set of gases represents a second portion of the set of input gases, and a flow rate of the first set of gases is different from a flow rate of the second set of gases.
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Abstract
A plasma processing system for processing a substrate is disclosed. The plasma processing system includes a gas distribution system. The plasma processing system also includes a gas flow control assembly coupled to the gas distribution system and configured to control a set of input gases provided by the gas distribution system. The plasma processing system further includes a first set of nozzles coupled to the gas flow control assembly and configured to supply a first set of gases for processing a first portion of the substrate. The plasma processing system further includes a second set of nozzles coupled to the gas flow control assembly and configured to supply a second set of gases for processing a second portion of the substrate.
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Citations
29 Claims
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1. A plasma processing system for processing a substrate, the plasma processing system comprising:
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a gas distribution system;
a gas flow control assembly coupled to the gas distribution system and configured to control a set of input gases provided by the gas distribution system, the set of input gases including at least one gas;
a first set of nozzles coupled to the gas flow control assembly and configured to supply a first set of gases for processing a first portion of the substrate; and
a second set of nozzles coupled to the gas flow control assembly and configured to supply a second set of gases for processing a second portion of the substrate, wherein the first set of gases represents a first portion of the set of input gases, the second set of gases represents a second portion of the set of input gases, and a flow rate of the first set of gases is different from a flow rate of the second set of gases. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for processing a substrate, the substrate including a barrier layer and deposited photoresist, the method comprising:
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supplying and ionizing a first set of gases to partially etch the deposited photoresist at a first portion of the substrate in a plasma processing chamber;
supplying and ionizing a second set of gases to partially etch the deposited photoresist at a second portion of the substrate in the plasma processing chamber; and
removing the barrier layer in the plasma processing chamber. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A method for processing a substrate in a plasma processing chamber in a plasma processing system, the method comprising:
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injecting a first set of gases into the plasma processing chamber;
injecting a second set of gases into the plasma processing chamber;
exciting the first set of gases into plasma;
performing at least one of etching and deposition on the substrate utilizing the plasma; and
heating an electrode of the plasma processing system to increase collision between the plasma and the second set of gases, thereby reducing a processing rate of the at least one of etching and deposition. - View Dependent Claims (25, 26, 27, 28, 29)
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Specification