Semiconductor device
First Claim
1. A semiconductor device comprising:
- a plurality of pixels, each of the pixels comprising;
a light-emitting element;
a transistor; and
a protecting means disposed between the light-emitting element and the transistor, wherein the protecting means comprises at least one element selected from the group consisting of a resistor element, a capacitor element, a rectifying element and a combination thereof.
1 Assignment
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Accused Products
Abstract
Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.
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Citations
8 Claims
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1. A semiconductor device comprising:
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a plurality of pixels, each of the pixels comprising;
a light-emitting element;
a transistor; and
a protecting means disposed between the light-emitting element and the transistor, wherein the protecting means comprises at least one element selected from the group consisting of a resistor element, a capacitor element, a rectifying element and a combination thereof. - View Dependent Claims (2)
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3. A semiconductor device comprising:
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a plurality of pixels, each of the pixels comprising;
a light-emitting element having a pixel electrode;
a transistor having a source electrode and a drain electrode; and
a protecting means disposed between the pixel electrode of the light-emitting element and one of the source electrode and the drain electrode of the transistor, wherein the protecting means comprises a resistor element connected in series with the pixel electrode.
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4. A semiconductor device comprising:
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a plurality of pixels, each of the pixels comprising;
a light-emitting element having a pixel electrode;
a transistor having a source electrode and a drain electrode; and
a protecting means disposed between the pixel electrode of the light-emitting element and one of the source electrode and the drain electrode of the transistor, wherein the protecting means comprises a capacitor element for at least one of accumulation or discharge of electric charge that builds up in the pixel electrode.
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5. A semiconductor device comprising:
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a plurality of pixels, each of the pixels comprising;
a light-emitting element having a pixel electrode;
a first transistor having a first source electrode and a first drain electrode;
a protecting means disposed between the pixel electrode of the light-emitting element and one of the source electrode and the drain electrode of the transistor; and
an electric power source line, wherein the protecting means comprises a second transistor comprising;
a gate electrode;
a second drain electrode being connected to the gate electrode; and
a second source electrode being connected to the electric power source line, and wherein an electric charge that builds up in the pixel electrode is discharged into the electric power source line.
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6. A semiconductor device comprising:
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a plurality of pixels, each of the pixels comprising;
a light-emitting element having a pixel electrode;
a transistor having a source electrode and a drain electrode; and
a protecting means disposed between the pixel electrode of the light-emitting element and one of the source electrode and the drain electrode of the transistor; and
an electric power source line, wherein the protecting means comprises a diode comprising;
a first electrode being connected to the pixel electrode; and
a second electrode being connected to the electric power source line, and wherein an electric charge that builds up in the pixel electrode is discharged into the electric power source.
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7. A semiconductor device comprising:
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a plurality of pixels, each of the pixels comprising;
a light-emitting element having a pixel electrode;
a transistor having a first source electrode and a first drain electrode; and
a protecting means disposed between the pixel electrode of the light-emitting element and one of the source electrode and the drain electrode of the transistor; and
an electric power source line, wherein the protecting means comprises a transistor comprising;
a gate electrode;
a second drain electrode being connected to the gate electrode; and
a second source electrode being connected to the electric power source line, wherein an electric charge that builds up in the pixel electrode is discharged into the electric power source line, and wherein the electric potential of the pixel electrode is set to one of the electric potential of the electric power source line and an electric potential conforming thereto.
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8. A semiconductor device comprising:
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a plurality of pixels, each of the pixels comprising;
a light-emitting element having a pixel electrode;
a transistor having a source electrode and a drain electrode; and
a protecting means disposed between the pixel electrode of the light-emitting element and one of the source electrode and the drain electrode of the transistor; and
an electric power source line, wherein the protecting means comprises a diode comprising;
a first electrode being connected to the pixel electrode; and
a second electrode being connected to the electric power source line, wherein electric charge that builds up in the pixel electrode is discharged into the electric power source line, and wherein the electric potential of the pixel electrode is set to one of the electric potential of the electric power source line and an electric potential conforming thereto.
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Specification