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Semiconductor integrated circuit

  • US 20070176233A1
  • Filed: 12/15/2006
  • Published: 08/02/2007
  • Est. Priority Date: 01/27/2006
  • Status: Active Grant
First Claim
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1. A semiconductor integrated circuit comprising:

  • a plurality of MOS transistors each having a source, a drain, a body, a gate insulating film provided over the body, and a gate provided over the gate insulating film, said MOS transistors being provided over an insulating thin film of a substrate;

    wherein the plurality of MOS transistors are provided in mixed form in such a manner that the bodies thereof are brought into floating, the voltages of the bodies are fixed and the voltages of the bodies are set variable.

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