Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device

• US 20070178319A1
• Filed: 01/22/2007
• Published: 08/02/2007
• Est. Priority Date: 11/13/2002
• Status: Abandoned Application

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Nakagawa, Hideo, Sasago, Masaru, Hamada, Yoshitaka, Yagihashi, Fujio
• Application Number:
  US11/625,754
• Publication Number:
  US 20070178319A1
• Time in Patent Office: Days
• US Class Current: 428/447
• CPC Class Codes: C08G 77/04 Polysiloxanes
• CPC Class Codes: C09D 183/04 Polysiloxanes
• CPC Class Codes: C09D 183/14 in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms C09D183/10 takes precedence
• CPC Class Codes: C09D 4/00 Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/31695 Deposition of porous oxides or porous glassy oxides or oxide based porous glass
• CPC Class Codes: Y10T 428/31663 As siloxane, silicone or silane

Abstract

The present invention is a composition for forming a porous film obtainable by hydrolysis and condensation, in an acidic or alkaline condition, of a mixture of 100 parts by weight of one or more compounds selected of the group consisting of hydrolysable silicon compounds represented by Formulas (1) and (2) as described herein and partially hydrolyzed and condensed products of the hydrolysable silicon compounds represented by Formulas (1) and (2), and 0.1 to 20 parts by weight of one or more cross-linking agents selected from the group consisting of structure-controlled cyclic or multi-branched oligomers represented by Formulas (3) to (8) as described herein.

Claims

1-6. -6. (canceled)

7. A semiconductor device comprising internal porous film which is formable by a composition for forming porous film obtainable by hydrolysis and condensation, in an acidic or alkaline condition, of a mixture of 100 parts by weight of one or more compounds selected of the group consisting of hydrolysable silicon compounds represented by Formulas (1) and (2) and partially hydrolyzed and condensed products of the hydrolysable silicon compounds represented by Formulas (1) and (2):

R¹_aSiZ¹<sub>4−

a</sub> 

 

(1)
R²_b(Z²)<sub>3−

b</sub>Si—

Y—

S1(R³)_cZ³<sub>3−

c</sub> 

 

(2)

wherein R¹, R² and R³ each independently represents a monovalent hydrocarbon group which may be substituted or non-substituted;

Z¹, Z² and Z³ each independently represents a hydrolysable group;

Y is independently selected from the group consisting of an oxygen atom, a phenylene group and an alkylene group having carbon atom number of 1 to 6;

a independently represents an integer of 0 to 3;

b and c each independently represents an integer of 0 to 2;

and 0.1 to 20 parts by weight of one or more cross-linking agents selected from the group consisting of structure-controlled cyclic or multi-branched oligomers represented by Formulas (3) to (8);

[R⁴(H)SiO]_e[R⁵(Z⁴)SiO]_f 

 

(3)
(R⁶SiO_3/2)_g[R⁷(H)SiO]_h[R⁸(Z⁵)SiO]_i 

 

(4)
(HSiO_3/2)_j(Z⁶SiO_3/2)_k 

 

(5)
[H(Me)₂SiO_1/2]_L[Z⁷(Me)₂SiO_1/2]_m(R⁹SiO_3/2)_n[R¹⁰(Z⁸)SiO]_o 

 

(6)
(H(Me)₂SiO_1/2)]_p[Z⁹(Me)₂SiO_1/2]_q(SiO₂)_r(Z¹⁰SiO_3/2)_s 

 

(7)
(Z¹¹₃SiO_1/2)_t(R¹¹₂SiO)_u(R¹²SiO_3/2)_v[R¹³(Z¹²)SiO]_w(SiO₂)_x(Z¹³SiO_3/2)_y 

 

(8)

wherein Me represents a methyl group;

R⁴ to R¹³ each independently represents a monovalent hydrocarbon group which may be substituted or non-substituted;

Z⁴ to Z¹³ each independently represents a hydrolysable group;

e represents an integer that is not 0;

f, g, h, i, j and k each independently represents an integer of 0 to 10 with proviso that e+f≧

3, g+h+i≧

4, j+k≧

4; and

at least one of g and h is not 0;

L, m, n, o, p, q, r, s, t, u, v, w, x and y each represents an integer of 0 to 20 with proviso that L+m+n+o≧

4, p+q+r+s≧

4, t+u+v+w+x+y≧

3, at least one of L, m, and n is not 0,and at least one of t, u, v, x, and y is not 0.

8. The semiconductor device according to claim 7 wherein said porous film is between metal interconnections in a same layer of multi-level interconnections, or is between upper and lower metal interconnection layers.

9. The semiconductor device according to claim 7, wherein the mixture comprises at least one compound selected from the group consisting of hydrolysable silicon compounds represented by Formula (1) and partially hydrolyzed and condensed products of the hydrolysable silicon compounds represented by Formula (1).

10. The semiconductor device according to claim 7, wherein the mixture comprises at least one compound selected from the group consisting of hydrolysable silicon compounds represented by Formula (2) and partially hydrolyzed and condensed products of the hydrolysable silicon compounds represented by Formula (2).

11. The semiconductor device according to claim 7, wherein the one or more cross-linking agents comprises at least one cyclic or multi-branched oligomer represented by Formula (3).

12. The semiconductor device according to claim 7, wherein the one or more cross-linking agents comprises at least one cyclic or multi-branched oligomer represented by Formula (4).

13. The semiconductor device according to claim 7, wherein the one or more cross-linking agents comprises at least one cyclic or multi-branched oligomer represented by Formula (5).

14. The semiconductor device according to claim 7, wherein the one or more cross-linking agents comprises at least one cyclic or multi-branched oligomer represented by Formula (6).

15. The semiconductor device according to claim 7, wherein the one or more cross-linking agents comprises at least one cyclic or multi-branched oligomer represented by Formula (7).

16. The semiconductor device according to claim 7, wherein the one or more cross-linking agents comprises at least one cyclic or multi-branched oligomer represented by Formula (8).

17. The semiconductor device according to claim 7, wherein said composition comprises 1 to 10 parts by weight of the one or more cross-linking agents.

18. The semiconductor device according to claim 7, wherein said composition comprises 2 to 5 parts by weight of the one or more cross-linking agents.