Semiconductor Production Apparatus
First Claim
1. A semiconductor production apparatus for etching a semiconductor wafer arranged in a container and having a film on the surface thereof, by use of a plasma generated in the container, comprising:
- a detector which detects a temporal change of a quantity of an interference light for at least two wavelengths obtained from the surface of the wafer for a predetermined time period of an etching process of the wafer; and
a determining device which determines an etching quantity of the wafer, which varies as long as the etching process proceeds, based upon a particular change arising in the interference light of plural pairs of wavelengths, the plural pairs of the wavelengths corresponding to the etching quantities, respectively, and the particular change being detected by using detected results obtained from the detector.
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Accused Products
Abstract
A semiconductor production apparatus and method for etching a semiconductor wafer arranged in a container and having a film on the surface thereof, by use of a plasma generated in the container. A temporal change of a quantity of an interference light is detected for at least two wavelengths obtained from the surface of the wafer for a predetermined time period of an etching process of the wafer, an etching quantity of the wafer is determined, which varies as long as the etching process proceeds, based upon a particular change arising in the interference light of plural pairs of wavelengths, the plural pairs of the wavelengths corresponding to the etching quantities, respectively.
18 Citations
8 Claims
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1. A semiconductor production apparatus for etching a semiconductor wafer arranged in a container and having a film on the surface thereof, by use of a plasma generated in the container, comprising:
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a detector which detects a temporal change of a quantity of an interference light for at least two wavelengths obtained from the surface of the wafer for a predetermined time period of an etching process of the wafer; and
a determining device which determines an etching quantity of the wafer, which varies as long as the etching process proceeds, based upon a particular change arising in the interference light of plural pairs of wavelengths, the plural pairs of the wavelengths corresponding to the etching quantities, respectively, and the particular change being detected by using detected results obtained from the detector. - View Dependent Claims (2, 3, 4)
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5. A semiconductor production method for etching a semiconductor wafer arranged in a container and having a film on the surface thereof, by use of a plasma generated in the container, comprising the steps of:
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detecting a temporal change of a quantity of an interference light for at least two wavelengths obtained from the surface of the wafer for a predetermined time period of an etching process of the wafer; and
determining an etching quantity of the wafer, which varies as long as the etching process proceeds, based upon a particular change arising in the interference light of plural pairs of wavelengths, the plural pairs of the wavelengths corresponding to the etching quantities, respectively, and the particular change being detected by using detected results obtained in the step of detecting. - View Dependent Claims (6, 7, 8)
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Specification