Method of manufacturing semiconductor device and cleaning apparatus

• US 20070178613A1
• Filed: 09/14/2006
• Published: 08/02/2007
• Est. Priority Date: 01/30/2006
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Miyazaki, Kunihiro, Matsumura, Tsuyoshi, Uozumi, Yoshihiro
• Granted Patent: US 7,635,601 B2
• Time in Patent Office: Days
• US Class Current: 438/17
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: H01L 22/14 for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
• CPC Class Codes: Y10S 134/902 Semiconductor wafer

Abstract

The disclosure concerns a manufacturing method of a semiconductor device includes dry-etching a semiconductor substrate or a structure formed on the semiconductor substrate; supplying a solution onto the semiconductor substrate; measuring a specific resistance or a conductivity of the supplied solution; and supplying a removal solution for removing the etching residual material onto the semiconductor substrate for a predetermined period of time based on the specific resistance or the conductivity of the solution, when an etching residual material adhering to the semiconductor substrate or the structure is removed.

Claims

1. A manufacturing method of a semiconductor device comprising:

dry-etching a semiconductor substrate or a structure formed on the semiconductor substrate;

supplying a solution onto the semiconductor substrate;

measuring a specific resistance or a conductivity of the supplied solution; and

supplying a removal solution for removing the etching residual material onto the semiconductor substrate for a predetermined period of time based on the specific resistance or the conductivity of the solution, when an etching residual material adhering to the semiconductor substrate or the structure is removed.

2. The manufacturing method of a semiconductor device according to claim 1, wherein

the solution supplied onto the semiconductor substrate is a solution having an oxidation-reduction potential of 0.5 V or less.

3. The manufacturing method of a semiconductor device according to claim 1, wherein

the solution supplied onto the semiconductor substrate is pure water.

4. The manufacturing method of a semiconductor device according to claim 1, wherein

the specific resistance or the conductivity of the solution is periodically or continuously measured,

the predetermined period for supplying the removal solution is determined on the basis of a minimum value of the specific resistance or a maximum value of the conductivity of the solution.

5. A manufacturing method of a semiconductor device comprising:

dry-etching a semiconductor substrate or a structure formed on the semiconductor substrate;

supplying a solution from a nozzle onto the semiconductor substrate while scanning the semiconductor substrate from the end portion to the central portion thereof and while rotating the semiconductor substrate;

periodically or continuously measuring a specific resistance or a conductivity of the supplied solution ; and

supplying a removal solution for removing the etching residual material onto the semiconductor substrate while keeping the semiconductor substrate at a predetermined temperature on the basis of the specific resistance or the conductivity of the solution, when an etching residual material adhering to the semiconductor substrate or the structure is removed.

6. The manufacturing method of a semiconductor device according to claim 5, wherein

at least a temperature of an end portion of the semiconductor substrate and a temperature of the central portion of the semiconductor substrate are independently determined on the basis of a specific resistance or a conductivity of a solution supplied to the end portion of the semiconductor substrate and a specific resistance or a conductivity of a solution supplied to the central portion of the semiconductor substrate;

and

when the etching residual material is removed, the removal solution is supplied onto the semiconductor substrate while keeping the end portion of the semiconductor substrate and the central portion of the semiconductor substrate at temperatures determined for the end portion and the central portion, respectively.

7. A manufacturing method of a semiconductor device comprising:

dry-etching a semiconductor substrate or a structure formed on the semiconductor substrate;

supplying a solution onto the semiconductor substrate;

measuring a specific resistance or a conductivity of the supplied solution ; and

determining a paddle time for accumulating a removal solution on a surface of the semiconductor substrate on the basis of the specific resistance or the conductivity of the supplied solution, the removal solution removing a etching residual material adhering to the semiconductor substrate or the structure during the dry-etching;

determining a relative temperature between the semiconductor substrate and the removal solution on the basis of a coarseness/denseness of surface patterns of the semiconductor substrate; and

supplying the removal solution, which has-a temperature different from the semiconductor substrate by the relative temperature, on the semiconductor substrate, and accumulating the removal solution on the semiconductor substrate for the paddle time, when the etching residual material is removed.

8. The method of manufacturing a semiconductor device according to claim 7, wherein

when the specific resistance or the conductivity of the solution increases as a density of surface patterns of the semiconductor substrate or a density of surface patterns of the structure are low, a temperature of the semiconductor substrate is set to be lower than a temperature of the removal solution;

and

when the specific resistance or the conductivity of the solution decreases as the density of the surface patterns of the semiconductor substrate or the density of the surface patterns of the structure are low, the temperature of the semiconductor substrate is set to be higher than the temperature of the removal solution.

9. A manufacturing method of a semiconductor device comprising:

dry-etching a semiconductor substrate or a structure formed on the semiconductor substrate;

supplying a solution, which has an oxidation-reduction potential is 0.5 V or less, on the semiconductor substrate or the structure, to which an etching residual material adheres;

removing the etching residual material by supplying the removal solution onto the semiconductor substrate or the structure.

10. The manufacturing method of a semiconductor device according to claim 9, wherein

the solution includes any one of a solution including any one of a hydrochloric acid, a chloric acid, a hypochlorous acid, a chlorous acid, a perchloric acid, a hydrofluoric acid, a hydro cyanic acid, a carbonic acid, hydrogencarbonate, a sulfuric acid, a sulfurous acid, nitric acid, a nitrous acid, a phosphoric acid, a formic acid, an oxalic acid, an acetic acid, a citric acid, a maleic acid, a malonic acid, an oleic acid, a tartaric acid, or a glyoxylic acid.

11. The manufacturing method of a semiconductor device according to claim 9, wherein

the solution is a pure water or a solution in which at least any one of HCI gas, HF gas, CO gas, CO₂ gas, NO gas, NO₂ gas, SO₂ gas, SO₃ gas dissolve.

12. A cleaning apparatus comprising:

a stage rotating a semiconductor substrate to which an etching residual material adheres, the stage controlling a temperature of the semiconductor substrate;

a first nozzle which discharges a solution onto a surface of the semiconductor substrate;

a measuring unit which measures a specific resistance or a conductivity of the solution discharged onto the semiconductor substrate;

a processing unit which determines time for supplying the removal solution onto the semiconductor substrate on the basis of the specific resistance or the conductivity of the solution; and

a second nozzle which discharges a removal solution for removing the etching residual material depending on the time determined by the processing unit.

13. The cleaning apparatus according to claim 12, wherein

the solution discharged from the first nozzle has an oxidation-reduction potential of 0.5 V or less.

14. The cleaning apparatus according to claim 12, wherein

the solution discharged from the first nozzle is pure water.

15. The cleaning apparatus according to claim 12, wherein

the processing unit determines time for supplying the removal solution onto the semiconductor substrate on the basis of a minimum value of the specific resistance or a maximum value of the conductivity of the solution.

16. The cleaning apparatus according to claim 12, further comprising:

a circulating tank which recovers the removal solution supplied onto the semiconductor substrate and circulates the removal solution to the second nozzle.