Method of manufacturing semiconductor device and display device

• US 20070178687A1
• Filed: 03/16/2007
• Published: 08/02/2007
• Est. Priority Date: 05/16/2003
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamaguchi, Tetsuji, Takayama, Toru, Yamazaki, Shunpei
• Granted Patent: US 7,575,993 B2
• Time in Patent Office: Days
• US Class Current: 438/597
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/136295 Materials; Compositions; Manufacture processes
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing

Abstract

To provide a method of forming a wiring for the purpose of providing a semiconductor device, which is superior in reliability and cost performance. Further, to provide methods of manufacturing a semiconductor device and a display device by using the method of forming the wiring according to the present invention. According to the present invention, when a wiring material and the like is directly patterned on a substrate mainly having an insulating surface by droplet discharging method, a wiring is formed at a position including at least an opening in contact with an underlying portion on an insulating film provided with the opening by dropping a liquid droplet containing a conductive composition by droplet discharging method. By heating the substrate with the wiring formed thereon, a surface of the wiring on the opening and a surface of the wiring other than the wiring on the opening are approximately leveled, and the opening is filled.

Claims

1-42. -42. (canceled)

43. A method of manufacturing a semiconductor device comprising of:

forming a semiconductor layer over a substrate;

forming an insulating film over the semiconductor layer;

forming an opening in the insulating film over the semiconductor layer;

dropping a liquid droplet, containing a conductive composition, by a droplet discharging method over the substrate, wherein a wiring is then formed at a location over the substrate including at least in the opening; and

performing a heat treatment, wherein the wiring extends to a bottom portion of the opening and the wiring is electrically connected to the semiconductor layer.

44. A method according to claim 43, further comprising steps of:

after the heat treatment, forming a mask on the wiring; and

etching the wiring by using the mask.

45. A method according to claim 44, wherein the mask is formed by a droplet discharging method using an inkjet nozzle.

46. A method according to claim 43, further comprising:

forming a partition wall over the substrate prior to dropping the liquid droplet,

wherein the wiring is formed by the droplet discharging method using an inkjet nozzle and is formed inside of the partition wall.

47. A method according to claim 46, wherein the partition wall is manufactured by a droplet discharging method using an inkjet nozzle.

48. A method according to claim 43, wherein the heat treatment is carried out under reduced pressure.

49. A method according to claim 43, wherein the heat treatment is performed by using a lamp.

50. A method according to claim 43, wherein the heat treatment is performed by an irradiating laser beam.

51. A method according to claim 43, wherein the conductive composition is formed by dispersing a material containing a plurality of nanometal particles in a solvent.

52. A method according to claim 43, wherein a surface of the wiring on the opening and a surface of the wiring other than on the opening are made approximately level over the substrate by the heat treatment.

53. A method of manufacturing a semiconductor device comprising of:

forming a gate electrode over a substrate;

forming a gate insulating film over the substrate;

forming a semiconductor layer having an amorphous structure over the gate electrode;

forming a semiconductor layer doped with an n-type or p-type conductivity over the semiconductor layer having the amorphous structure;

forming source and drain electrodes over the semiconductor layer doped with the n-type or p-type conductivity;

forming an insulating film over the source and drain electrodes;

forming an opening in the insulating film over the source and drain electrodes;

dropping a liquid droplet, containing a conductive composition, by a droplet discharging method over the substrate, wherein a wiring is then formed at a location over the substrate including at least in the opening; and

performing a heat treatment, wherein the wiring extends to a bottom portion of the opening and the wiring is electrically connected to the semiconductor layer.

54. A method according to claim 53, wherein the heat treatment is carried out under reduced pressure.

55. A method according to claim 53, wherein the heat treatment is performed by using a lamp.

56. A method according to claim 53, wherein the heat treatment is performed by an irradiating laser beam.

57. A method according to claim 53, wherein the conductive composition is formed by dispersing a material containing a plurality of nanometal particles in a solvent.

58. A method according to claim 53, wherein a surface of the wiring on the opening and surface of the wiring other than on the opening are made approximately level over the substrate by the heat treatment.

59. A method of manufacturing a semiconductor device comprising of:

forming a semiconductor layer over a substrate;

forming an insulating film over the semiconductor layer;

forming an opening in the insulating film over the semiconductor layer;

dropping a liquid droplet, containing a conductive composition, by a droplet discharging method over the substrate, wherein a wiring is then formed at a location over the substrate including at least in the opening;

performing a heat treatment, wherein the wiring extends to a bottom portion of the opening and the wiring is electrically connected to the semiconductor layer;

forming a pixel electrode by a droplet discharging method over the substrate; and

forming a light emitting layer over the pixel electrode.

60. A method according to claim 59, wherein the pixel electrode is formed of at least one compound selected from the group consisting of a compound of indium oxide and tin oxide, a compound of indium oxide and zinc oxide, zinc oxide, tin oxide, indium oxide, and titanium nitride.

61. A method according to claim 59, wherein the light emitting layer is formed by a droplet discharging method using an inkjet nozzle.

62. A method according to claim 59, wherein the heat treatment is carried out under reduced pressure.

63. A method according to claim 59, wherein the heat treatment is performed by using a lamp.

64. A method according to claim 59, wherein the heat treatment is performed by an irradiating laser beam.

65. A method according to claim 59, wherein the conductive composition is formed by dispersing a material containing a plurality of nanometal particles in a solvent.