×

Epitaxial deposition process and apparatus

  • US 20070181057A1
  • Filed: 02/03/2006
  • Published: 08/09/2007
  • Est. Priority Date: 02/03/2006
  • Status: Active Grant
First Claim
Patent Images

1. An epitaxial deposition method comprising:

  • introducing a substrate into a processing chamber;

    introducing a gas mixture into a plasma cavity;

    energizing the gas mixture to form a plasma of reactive gas in the cavity;

    introducing into the processing chamber the reactive gas;

    processing the substrate with the reactive gas to expose an epitaxy surface; and

    forming an epitaxial layer on the epitaxy surface.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×