PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
First Claim
1. A plasma processing apparatus in which plasma is generated with a predetermined gas excited by a microwave and a subject to be processed is processed by the generated plasma, the plasma processing apparatus comprising:
- a processing chamber in which the subject to be processed is processed with plasma;
a gas supply unit that supplies the predetermined gas into the processing chamber; and
a microwave supply unit that supplies the microwave into the processing chamber via slots provided in an antenna and via a dielectric member through which the microwave is transmitted;
wherein;
the dielectric member has at least partially a porous member and the predetermined gas is introduced into the processing chamber through the porous member.
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Accused Products
Abstract
A microwave plasma processing apparatus 100 includes a plurality of dielectric parts 31, through which microwaves are transmitted via a slot, and gas nozzles 27 disposed at positions lower than the dielectric parts 31. The dielectric parts 31 and the gas nozzles 27 are each constituted with a porous portion and a dense portion. A first gas supply unit supplies argon gas into a processing chamber through porous portions 31P at the individual dielectric parts 31. A second gas supply unit supplies silane gas and hydrogen gas into the processing chamber through porous portions 27P at the gas nozzles 27. The gases decelerate as they travel through the porous portions and, as a result, excessive agitation in the gases can be inhibited. Consequently, uniform plasma is generated and a high quality amorphous silicon film can be formed with the plasma.
32 Citations
19 Claims
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1. A plasma processing apparatus in which plasma is generated with a predetermined gas excited by a microwave and a subject to be processed is processed by the generated plasma, the plasma processing apparatus comprising:
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a processing chamber in which the subject to be processed is processed with plasma;
a gas supply unit that supplies the predetermined gas into the processing chamber; and
a microwave supply unit that supplies the microwave into the processing chamber via slots provided in an antenna and via a dielectric member through which the microwave is transmitted;
wherein;
the dielectric member has at least partially a porous member and the predetermined gas is introduced into the processing chamber through the porous member. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A plasma processing method for generating plasma with a predetermined gas excited by a microwave and processing a subject to be processed by the generated plasma, the plasma processing method comprising steps of:
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supplying the microwave into a processing chamber via a dielectric member through which the microwave is transmitted;
introducing the gas into the processing chamber through a porous member that the dielectric member has at least partially; and
generating plasma with the introduced gas excited by the microwave supplied into the processing chamber. - View Dependent Claims (16, 17, 18, 19)
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Specification