Light emitting diode having enhanced side emitting capability
First Claim
1. A light emitting diode structure, comprising:
- a substrate;
a metallic layer above said substrate;
a non-alloy ohmic contact layer above said metallic layer;
a light generating structure above said non-alloy ohmic contact layer; and
a thick transparent layer positioned at least in one of the following locations;
above said light generating structure, and between said light generating structure and said non-alloy ohmic contact layer.
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Accused Products
Abstract
A LED structure with enhanced side-emitting capability is provided. An embodiment of The LED structure comprises, on top of a substrate, a metallic layer, a non-alloy ohmic contact layer, a thick transparent layer, a light generating structure, sequentially arranged in the this order from bottom to top. The metallic layer functions a reflective mirror and is made of a pure metal or a metal nitride for superior reflectivity. The non-alloy ohmic contact layer is interposed between the light generating structure and the metallic layer so as to achieve the required low resistance electrical conduction. The thick transparent layer extracts a significant portion of the light to the sides of the LED structure. The thick transparent layer, made of a semiconductor material or a dielectric material having an refractive index between 1.5 to 3.5, could be located either above, below or both above and below the light generating structure.
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Citations
14 Claims
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1. A light emitting diode structure, comprising:
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a substrate;
a metallic layer above said substrate;
a non-alloy ohmic contact layer above said metallic layer;
a light generating structure above said non-alloy ohmic contact layer; and
a thick transparent layer positioned at least in one of the following locations;
above said light generating structure, and between said light generating structure and said non-alloy ohmic contact layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification