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Semiconductor memory device and method of fabricating the same

  • US 20070181969A1
  • Filed: 02/09/2007
  • Published: 08/09/2007
  • Est. Priority Date: 02/09/2006
  • Status: Active Grant
First Claim
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1. A semiconductor memory device, comprising:

  • an interlayer insulating film on a semiconductor substrate;

    an opening in the interlayer insulating film;

    a vertical fuse conforming to the opening;

    a fuse insulating film on the vertical fuse, the fuse insulating film filling the opening; and

    a metal wiring line electrically connected to the vertical fuse.

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