High performance system-on-chip inductor using post passivation process

• US 20070181970A1
• Filed: 01/30/2007
• Published: 08/09/2007
• Est. Priority Date: 12/21/1998
• Status: Abandoned Application

• Current Assignee: Megica Corporation (Chipbond Technology Corporation)
• Original Assignee: Megica Corporation (Chipbond Technology Corporation)
• Inventors: Lin, Mou-Shiung
• Application Number:
  US11/668,482
• Publication Number:
  US 20070181970A1
• Time in Patent Office: Days
• US Class Current: 257/531
• CPC Class Codes: H01L 23/5223 Capacitor integral with wiring layers
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01024 Chromium [Cr]
• CPC Class Codes: H01L 2924/3011 Impedance

Abstract

A system and method for forming post passivation inductors, and related structures, is described. High quality electrical components, such as inductors and transformers, are formed on a layer of passivation, or on a thick layer of polymer over a passivation layer.

Claims

1. A circuit component comprising:

a silicon substrate;

a metallization structure over said silicon substrate;

a passivation layer over said metallization structure;

a first polymer layer on said passivation layer, wherein said first polymer layer has a thickness greater than that of said passivation layer; and

a coil on said first polymer layer, wherein said coil comprises first and second terminals for external connection, not connected to said metallization structure.

2. The circuit component of claim 1, wherein said first polymer layer comprises polyimide.

3. The circuit component of claim 1, wherein said first polymer layer has a thickness of between 2 and 150 micrometers.

4. The circuit component of claim 1 further comprising a second polymer layer over said coil.

5. The circuit component of claim 4, wherein said second polymer layer comprises polyimide.

6. The circuit component of claim 4, wherein an opening in said second polymer layer exposes a metal pad connected to one of said first and second terminals.

7. The circuit component of claim 1 further comprising a wire bond pad connected to one of said first and second terminals.

8. The circuit component of claim 1 further comprising a solder bump connected to one of said first and second terminals.

9. The circuit component of claim 1, wherein said coil comprises a gold layer having a thickness of between 1 and 20 micrometers.

10. The circuit component of claim 1, wherein said coil comprises a titanium-containing layer and a gold layer over said titanium-containing layer.

11. The circuit component of claim 1, wherein said passivation layer comprises nitride.

12. The circuit component of claim 1 further comprising a transistor in or on said silicon substrate.

13. A circuit component comprising:

a silicon substrate;

a metallization structure over said silicon substrate;

a passivation layer over said metallization structure;

a coil over said passivation layer; and

a wirebond pad over said silicon substrate, wherein said wirebond pad is connected to a first terminal of said coil.

14. The circuit component of claim 13 further comprising a polymer layer between said passivation layer and said coil.

15. The circuit component of claim 14, wherein said polymer layer comprises polyimide.

16. The circuit component of claim 14, wherein said polymer layer has a thickness of between 2 and 150 micrometers.

17. The circuit component of claim 13 further comprising a polymer layer over said coil.

18. The circuit component of claim 17, wherein said polymer layer comprises polyimide.

19. The circuit component of claim 13, wherein said coil comprises a second terminal connected to said metallization structure exposed by an opening in said passivation layer.

20. The circuit component of claim 13, wherein said coil comprises a second terminal for external connection, not connected to said metallizatlon structure.

21. The circuit component of claim 13, wherein said coil comprises a titanium-containing layer and a gold layer over said titanium-containing layer.

22. The circuit component of claim 13, wherein said coil comprises a gold layer having a thickness of between 1 and 20 microns.

23. The circuit component of claim 13, wherein said passivation layer comprises nitride.

24. The circuit component of claim 13 further comprising a transistor in or on said silicon substrate.

25. A circuit component comprising:

a silicon substrate;

a metallization structure over said silicon substrate;

a passivation layer over said metallization structure;

a coil over said passivation layer;

a metal pad connected to a first terminal of said coil;

a first polymer layer over said coil, wherein an opening in said first polymer layer exposes said metal pad, wherein said opening has a sloped sidewall; and

a solder bump connected to said metal pad.

26. The circuit component of claim 25 further comprising an under bump metallization in said opening.

27. The circuit component of claim 25 further comprising a second polymer layer between said passivation layer and said coil.

28. The circuit component of claim 27, wherein said second polymer layer comprises polyimide.

29. The circuit component of claim 27, wherein said second polymer layer has a thickness of between 2 and 150 micrometers.

30. The circuit component of claim 25, wherein said first polymer layer comprises polyimide.

31. The circuit component of claim 25, wherein said coil comprises a second terminal connected to said metallization structure exposed by an opening in said passivation layer.

32. The circuit component of claim 25, wherein said coil comprises a second terminal for external connection, not connected to said metallization structure.

33. The circuit component of claim 25, wherein said coil comprises a titanium-containing layer and a gold layer over said titanium-containing layer.

34. The circuit component of claim 25, wherein said coil comprises a gold layer having a thickness of between 1 and 20 microns.

35. The circuit component of claim 25, wherein said passivation layer comprises nitride.

36. The circuit component of claim 25 further comprising a transistor in or on said silicon substrate.