CAPACITOR STRUCTURE

• US 20070181973A1
• Filed: 02/06/2006
• Published: 08/09/2007
• Est. Priority Date: 02/06/2006
• Status: Abandoned Application

• Current Assignee: United Microelectronics Corporation
• Original Assignee: United Microelectronics Corporation
• Inventors: Tseng, Chih-Yu, Hung, Cheng-Chou, Tseng, Hua-Chou, Liang, Victor
• Application Number:
  US11/307,396
• Publication Number:
  US 20070181973A1
• Time in Patent Office: Days
• US Class Current: 257/532
• CPC Class Codes: H01L 23/5223 Capacitor integral with wiring layers
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A capacitor structure including a plurality of conductive layers, a dielectric layer and a plurality of contacts is disclosed. The conductive layers are stacked, and each conductive layer has a first conductive pattern and a second conductive pattern. The dielectric layer is disposed between the first conductive pattern and the second conductive pattern and between two adjacent conductive layers. The contacts are disposed in the dielectric layer, and electrically connected to the first conductive patterns in two adjacent conductive layers and electrically connected to the second conductive patterns in two adjacent conductive layers. Wherein, the contact electrically connecting to the first conductive patterns in two adjacent conducive layers is a first strip contact, which extends between the first conductive patterns in two adjacent conductive layers, and the boundary of the first strip contact is located within the boundary of the first conductive pattern.

Claims

1. A capacitor structure, comprising:

a plurality of conductive layers, which are stacked, each conductive layer having a first conductive pattern and a second conductive pattern;

a dielectric layer, disposed between the first conductive pattern and the second conductive pattern and between two adjacent conductive layers; and

a plurality of contacts, disposed in the dielectric layer, electrically connecting to the first conductive patterns in two adjacent conductive layers and to the second conductive patterns in two adjacent conductive layers respectively, wherein

the contact electrically to connecting the first conductive patterns in two adjacent conductive layers is a first strip contact, which extends between the first conductive patterns in two adjacent conductive layers, and the boundary of the first strip contact is located within the boundary of the first conductive pattern.

2. The capacitor structure as claimed in claim 1, wherein the contact electrically connecting to the second conductive patterns in two adjacent conductive layers includes a second strip contact, which extends between the second conductive patterns in two adjacent conductive layers, and the boundary of the second strip contact is located within the boundary of the second conductive pattern.

3. The capacitor structure as claimed in claim 1, wherein the contact electrically connecting to the second conductive patterns in two adjacent conductive layers includes a column contact.

4. The capacitor structure as claimed in claim 1, wherein the material of the conductive layers includes metal.

5. The capacitor structure as claimed in claim 1, wherein the material of the contacts includes metal.

6. A capacitor structure, comprising:

a plurality of conductive layers, which are stacked, each conductive layer having a first comb conductive pattern and a second comb conductive pattern, the teeth of the first comb conductive pattern and the teeth of the second comb conductive pattern being disposed interlacedly;

a dielectric layer, disposed between the first comb conductive pattern and the second comb conductive pattern and between two adjacent conductive layers; and

a plurality of contacts, disposed in the dielectric layer, electrically connecting to the first comb conductive patterns in two adjacent conductive layers and to the second comb conductive patterns in two adjacent conductive layers respectively, wherein

the contact electrically connecting to the first comb conductive patterns in two adjacent conductive layers is a first comb contact, the pattern of the first comb contact corresponds to the pattern of the first comb conductive pattern, and the boundary of the first comb contact is located within the boundary of the first comb conductive pattern.

7. The capacitor structure as claimed in claim 6, wherein the contact electrically connecting to the second comb conductive patterns in two adjacent conductive layers includes a second comb contact, the pattern of the second comb contact corresponds to the pattern of the second comb conductive pattern, and the boundary of the second comb contact is located within the boundary of the second comb conductive pattern.

8. The capacitor structure as claimed in claim 6, wherein the contact electrically connecting to the second comb conductive patterns in two adjacent conductive layers includes a column contact.

9. The capacitor structure as claimed in claim 6, wherein the material of the conductive layers includes metal.

10. The capacitor structure as claimed in claim 6, wherein the material of the contacts includes metal.

11. A capacitor structure, comprising:

a plurality of conductive layers, which are stacked, each conductive layer having a first spiral conductive pattern and a second spiral conductive pattern disposed interlacedly;

a dielectric layer, disposed between the first spiral conductive pattern and the second spiral conductive pattern and between two adjacent conductive layers; and

a plurality of contacts, disposed in the dielectric layer, electrically connecting to the first spiral conductive patterns in two adjacent conductive layers and to the second spiral conductive patterns in two adjacent conductive layers respectively, wherein

the contact electrically connecting the first spiral conductive patterns in two adjacent conductive layers is a first spiral contact, the pattern of the first spiral contact corresponds to the pattern of the first spiral conductive pattern, and the boundary of the first spiral contact is located within the boundary of the first spiral conductive pattern.

12. The capacitor structure as claimed in claim 11, wherein the contact electrically connecting to the second spiral conductive patterns in two adjacent conductive layers includes a second spiral contact, the pattern of the second spiral contact corresponds to the pattern of the second spiral conductive pattern, and the boundary of the second spiral contact is located within the boundary of the second spiral conductive pattern.

13. The capacitor structure as claimed in claim 11, wherein the contact electrically connecting to the second spiral conductive patterns in two adjacent conductive layers includes a column contact.

14. The capacitor structure as claimed in claim 11, wherein the material of the conductive layers includes metal.

15. The capacitor structure as claimed in claim 11, wherein the material of the contacts includes metal.

16. A capacitor structure, comprising:

a plurality of conductive layers, which are stacked, each conductive layer having a first conductive pattern and a second conductive pattern, the first conductive pattern having an opening, the second conductive pattern being disposed in the opening;

a dielectric layer, disposed between the first conductive pattern and the second conductive pattern and between two adjacent conductive layers; and

a plurality of contacts, disposed in the dielectric layer, electrically connecting to the first conductive patterns in two adjacent conductive layers and to the second conductive patterns in two adjacent conductive layers respectively, wherein

the contact electrically connecting to the first conductive patterns in two adjacent conductive layers is a circular contact, the pattern of the circular contact corresponds to the pattern of the first conductive pattern, and the boundary of the circular contact is located within the boundary of the first conductive pattern.

17. The capacitor structure as claimed in claim 16, wherein the contact electrically connecting to the second conductive patterns in two adjacent conductive layers includes a strip contact, which extends between the second conductive patterns in two adjacent conductive layers, and the boundary of the strip contact is located within the boundary of the second conductive pattern.

18. The capacitor structure as claimed in claim 16, wherein the contact electrically connecting to the second conductive patterns in two adjacent conductive layers includes a column contact.

19. The capacitor structure as claimed in claim 16, wherein the material of the conductive layers includes metal.

20. The capacitor structure as claimed in claim 16, wherein the material of the contacts includes metal.